61 |
Low-pressure MOCVD growth of GaN/AlGaN multiple quantum wells for intersubband transitions Hoshino K, Someya T, Hirakawa K, Arakawa Y Journal of Crystal Growth, 237, 1163, 2002 |
62 |
Effects of internal piezoelectric field on electronic states of InGaN quantum dots grown on GaN Saito T, Arakawa Y Journal of Crystal Growth, 237, 1172, 2002 |
63 |
Luminescence in excess of 1.5 mu m at room-temperature of InAs quantum dots capped by a thin InGaAs strain-reducing layer Tatebayashi J, Nishioka M, Arakawa Y Journal of Crystal Growth, 237, 1296, 2002 |
64 |
Fabrication of GaN quantum dots by metalorganic chemical vapor selective deposition Tachibana K, Someya T, Ishida S, Arakawa Y Journal of Crystal Growth, 237, 1312, 2002 |
65 |
Stranski-Krastanow growth of GaN quantum dots by metalorganic chemical vapor deposition Miyamura M, Tachibana K, Someya T, Arakawa Y Journal of Crystal Growth, 237, 1316, 2002 |
66 |
Spectroscopic discrimination of non-radiative centers in quantum wells by two wavelength excited photoluminescence Ocampo JM, Kamata N, Hoshino K, Hirasawa M, Yamada K, Nishioka M, Arakawa Y Journal of Crystal Growth, 210(1-3), 238, 2000 |
67 |
Formation of uniform 10-nm-scale InGaN quantum dots by selective MOCVD growth and their micro-photoluminescence intensity images Tachibana K, Someya T, Ishida S, Arakawa Y Journal of Crystal Growth, 221, 576, 2000 |
68 |
Preparation Conditions and Properties of Biodegradable Hydrogels Prepared by Gamma-Irradiation of Poly(Aspartic Acid)S Synthesized by Thermal Polycondensation Tomida M, Yabe M, Arakawa Y, Kunioka M Polymer, 38(11), 2791, 1997 |
69 |
Micelle Formation and Counterion Binding of Dodecylammonium Alkanesulfonates in Water at Different Temperatures Sugihara G, Arakawa Y, Tanaka K, Lee S, Moro Y Journal of Colloid and Interface Science, 170(2), 399, 1995 |