| 591 |
High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma
Sakikawa N, Shishida Y, Miyazaki S, Hirose M
Solar Energy Materials and Solar Cells, 66(1-4), 337, 2001 |
| 592 |
Derivation of the Forchheimer law via homogenization
Chen ZX, Lyons SL, Qin G
Transport in Porous Media, 44(2), 325, 2001 |
| 593 |
Power consumption in shaking flasks on rotary shaking machines: I. Power consumption measurement in unbaffled flasks at low liquid viscosity
Buchs J, Maier U, Milbradt C, Zoels B
Biotechnology and Bioengineering, 68(6), 589, 2000 |
| 594 |
Liquefaction process with bottom recycling for complete conversion of brown coal
Okuma O
Fuel, 79(3), 355, 2000 |
| 595 |
Roles of extractant concentration and flow rate of organic phase in countercurrent multistage metal solvent extraction-stripping process for metal ions
Tanaka M, Kobayashi M, Shibata J
Journal of Chemical Engineering of Japan, 33(4), 573, 2000 |
| 596 |
Attrition of granular slug by single horizontal jet equipped in fluidized bed
Kage H, Kawaji K, Ogura H, Matsuno Y
Journal of Chemical Engineering of Japan, 33(4), 605, 2000 |
| 597 |
Low temperature measurements of the rate of association to benzene dimers in helium
Hamon S, Le Picard SD, Canosa A, Rowe BR, Smith IWM
Journal of Chemical Physics, 112(10), 4506, 2000 |
| 598 |
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy
Gao F, Huang DD, Li JP, Lin YX, Kong MY, Sun DZ, Li JM, Lin LY
Journal of Crystal Growth, 220(4), 461, 2000 |
| 599 |
Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source
Wang XL, Ogura M
Journal of Crystal Growth, 221, 556, 2000 |
| 600 |
Effects of flow rate and starvation of reactant gases on the performance of phosphoric acid fuel cells
Song RH, Kim CS, Shin DR
Journal of Power Sources, 86(1-2), 289, 2000 |
