화학공학소재연구정보센터
검색결과 : 87건
No. Article
51 Electron backscatter diffraction of a Ge growth tip from a vertical gradient freeze furnace
Henager CH, Edwards DJ, Schemer-Kohrn AL, Sundaram SK, Riley BJ, Bliss M
Journal of Crystal Growth, 311(1), 10, 2008
52 The structure of < 1 1 1 > B oriented GaP nanowires
Johansson J, Karlsson LS, Svensson CPT, Martensson T, Wacaser BA, Deppert K, Samuelson L
Journal of Crystal Growth, 298, 635, 2007
53 Condensation, crystallization and coalescence of amorphous Al2O3 nanoparticles
Pan CN, Shen PY, Chen SY
Journal of Crystal Growth, 299(2), 393, 2007
54 Investigation of defect formation in 4H-SiC epitaxial growth by X-ray topography and defect selective etching
Tsuchida H, Kamata I, Nagano M
Journal of Crystal Growth, 306(2), 254, 2007
55 Revealing of planar defects and partial dislocations in large synthetic diamond crystals by the selective etching
Khokhryakov AF, Palyanov YN
Journal of Crystal Growth, 306(2), 458, 2007
56 Dependence of stacking fault and twin densities on deposition conditions during 3C-SiC heteroepitaxial growth on on-axis Si(001) substrates
Yun J, Takahashi T, Ishida Y, Okumura H
Journal of Crystal Growth, 291(1), 140, 2006
57 Reductions of twin and protrusion in 3C-SiC heteroepitaxial growth on Si(100)
Yun J, Takahashi T, Mitani T, Ishida Y, Okumura H
Journal of Crystal Growth, 291(1), 148, 2006
58 Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers
Kamler G, Borysiuk J, Weyher JL, Czernecki R, Leszczynski M, Grzegory I, Porowski S
Journal of Crystal Growth, 282(1-2), 45, 2005
59 Effect of nitrogen doping on the formation of planar defects in 4H-SiC
Siche D, Albrecht M, Doerschel J, Irmscher K, Rost RJ, Rossberg M, Schulz D
Materials Science Forum, 483, 39, 2005
60 Planar defects, voids and their relationship in 3C-SiC layers
Mendez D, Aouni A, Araujo D, Ferro G, Monteil Y, Bustarret E
Materials Science Forum, 483, 189, 2005