| 51 |
Modelling of radiation response of p-channel SiC MOSFETs
Lee KK, Ohshima T, Itoh H
Materials Science Forum, 433-4, 761, 2002 |
| 52 |
Characterization of interface traps in the subthreshold region of implanted 4H and 6H-SiC MOSFETs
Zeng Y, Softic A, White MH
Solid-State Electronics, 46(10), 1579, 2002 |
| 53 |
A novel experimental technique: combined gated-diode method for extracting lateral distribution of interface traps in SOI NMOSFETs
He J, Zhang X, Huang A, Huang R
Solid-State Electronics, 45(7), 1107, 2001 |
| 54 |
Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si wafer
Yoshida H, Nakanishi R, Kishino S
Journal of Crystal Growth, 210(1-3), 379, 2000 |
| 55 |
Electrically active traps at the 4H-SiC/SiO2 interface responsible for the limitation of the channel mobility
Bassler M, Afanas'ev VV, Pensl G, Schulz M
Materials Science Forum, 338-3, 1065, 2000 |
| 56 |
MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation
Yano H, Kimoto T, Matsunami H, Bassler M, Pensl G
Materials Science Forum, 338-3, 1109, 2000 |
