화학공학소재연구정보센터
검색결과 : 87건
No. Article
51 Depth profiles of boron and nitrogen in SiON films by backside SIMS
Sameshima J, Maeda R, Yamada K, Karen A, Yamada S
Applied Surface Science, 231-2, 614, 2004
52 Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers
Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G
Applied Surface Science, 234(1-4), 240, 2004
53 Reliability challenges of high performance PD SOICMOS with ultra-thin gate dielectrics
Zhao E, Zhang J, Salman A, Subba N, Chan J, Marathe A, Beebe S, Taylor K
Solid-State Electronics, 48(10-11), 1703, 2004
54 Interfacial oxide determination and chemical/electrical structures of WO2/SiOx/Si gate dielectrics
Xie L, Zhao Y, White MH
Solid-State Electronics, 48(10-11), 2071, 2004
55 Low temperature Si and SiGe oxidation through dielectric barrier discharges
Yu JJ, Boyd IW
Thin Solid Films, 453-54, 63, 2004
56 Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film
Balasubramanian M, Bera LK, Mathew S, Balasubramanian N, Lim V, Joo MS, Cho BJ
Thin Solid Films, 462-63, 101, 2004
57 ALD (HfO2)(x)(Al2O3)(1-x) high-k gate dielectrics for advanced MOS devices application
Yu HY, Li MF, Kwong DL
Thin Solid Films, 462-63, 110, 2004
58 SIMS depth profiling of advanced gate dielectric materials
Bennett J, Gondran C, Sparks C, Hung PY, Hou A
Applied Surface Science, 203, 409, 2003
59 Interactions of moisture and organic contaminants with SiO2 and ZrO2 gate dielectric films
Rana N, Raghu P, Shero E, Shadman F
Applied Surface Science, 205(1-4), 160, 2003
60 Diffusion and incorporation of Zr into thermally grown SiO2 on Si(100)
Yamaoka M, Murakami H, Miyazaki S
Applied Surface Science, 216(1-4), 223, 2003