화학공학소재연구정보센터
검색결과 : 59건
No. Article
51 Si doped p- and n-type AlxGa1-xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrate
Saravanan S, Dharmarasu N, Vaccaro PO, Ocampo JMZ, Kubota K, Saito N
Solid-State Electronics, 48(10-11), 1791, 2004
52 Non-Darcian thermal stability of a heat generating fluid in a porous annulus
Saravanan S, Kandaswamy P
International Journal of Heat and Mass Transfer, 46(25), 4863, 2003
53 Stability of natural convective motion in pure water near 4 degrees C contained in a slot with a moving sidewall
Saravanan S, Kandaswamy P
International Journal of Heat and Mass Transfer, 45(6), 1321, 2002
54 Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxy
Saravanan S, Hayashi Y, Soga T, Jimbo T, Umeno M, Sato N, Yonehara T
Journal of Crystal Growth, 237, 1450, 2002
55 Impurity reduction and crystalline quality improvement due to isovalent doping (In) in GaAs epilayers on Si substrate by chemical beam epitaxy
Saravanan S, Adachi M, Satoh N, Soga T, Jimbo T, Umeno M
Journal of Crystal Growth, 209(4), 621, 2000
56 Impurity investigation and structural quality determination of GaAs epilayers from mixed solvents (Ga plus Bi)
Saravanan S, Baskar K, Soga T, Jimbo T, Umeno M
Journal of Crystal Growth, 219(4), 321, 2000
57 Improve Piping Design
Saravanan S, Premalatha M, Punitha G, Subramanian P
Hydrocarbon Processing, 75(5), 59, 1996
58 A Quick and Reliable Method to Determine the Order of an Irreversible Unimolecular Reaction
Saravanan S, Subramanian P
Industrial & Engineering Chemistry Research, 35(8), 2766, 1996
59 Deep-Level Transient Spectroscopy Studies of Undoped and Sn-Doped AlxGa1-xAs Epilayers Grown by Liquid-Phase Epitaxy
Jothilingam R, Saravanan S, Baskar K
Journal of Materials Science Letters, 15(13), 1132, 1996