검색결과 : 59건
No. | Article |
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51 |
Si doped p- and n-type AlxGa1-xAs epilayers for high density lateral-junction LED arrays on (311)A patterned substrate Saravanan S, Dharmarasu N, Vaccaro PO, Ocampo JMZ, Kubota K, Saito N Solid-State Electronics, 48(10-11), 1791, 2004 |
52 |
Non-Darcian thermal stability of a heat generating fluid in a porous annulus Saravanan S, Kandaswamy P International Journal of Heat and Mass Transfer, 46(25), 4863, 2003 |
53 |
Stability of natural convective motion in pure water near 4 degrees C contained in a slot with a moving sidewall Saravanan S, Kandaswamy P International Journal of Heat and Mass Transfer, 45(6), 1321, 2002 |
54 |
Growth of GaAs epitaxial layers on Si substrate with porous Si intermediate layer by chemical beam epitaxy Saravanan S, Hayashi Y, Soga T, Jimbo T, Umeno M, Sato N, Yonehara T Journal of Crystal Growth, 237, 1450, 2002 |
55 |
Impurity reduction and crystalline quality improvement due to isovalent doping (In) in GaAs epilayers on Si substrate by chemical beam epitaxy Saravanan S, Adachi M, Satoh N, Soga T, Jimbo T, Umeno M Journal of Crystal Growth, 209(4), 621, 2000 |
56 |
Impurity investigation and structural quality determination of GaAs epilayers from mixed solvents (Ga plus Bi) Saravanan S, Baskar K, Soga T, Jimbo T, Umeno M Journal of Crystal Growth, 219(4), 321, 2000 |
57 |
Improve Piping Design Saravanan S, Premalatha M, Punitha G, Subramanian P Hydrocarbon Processing, 75(5), 59, 1996 |
58 |
A Quick and Reliable Method to Determine the Order of an Irreversible Unimolecular Reaction Saravanan S, Subramanian P Industrial & Engineering Chemistry Research, 35(8), 2766, 1996 |
59 |
Deep-Level Transient Spectroscopy Studies of Undoped and Sn-Doped AlxGa1-xAs Epilayers Grown by Liquid-Phase Epitaxy Jothilingam R, Saravanan S, Baskar K Journal of Materials Science Letters, 15(13), 1132, 1996 |