화학공학소재연구정보센터
검색결과 : 77건
No. Article
51 Growth and hydrogenation of epitaxial yttrium switchable mirrors on CaF2
Kooij ES, Rector JH, Nagengast DG, Kerssemakers JWJ, Dam B, Griessen R, Remhof A, Zabel H
Thin Solid Films, 402(1-2), 131, 2002
52 Study of the spontaneous alignment of InAs quantum dots along the surface steps as a function of the InAs coverage
da Silva MJ, Quivy AA, Gonzalez-Borrero PP, Marega E
Thin Solid Films, 410(1-2), 188, 2002
53 Epitaxial growth and properties of MBE-grown ferromagnetic Co-doped TiO2 anatase films on SrTiO3(001) and LaAlO3(001)
Chambers SA, Wang CM, Thevuthasan S, Droubay T, McCready DE, Lea AS, Shutthanandan V, Windisch CF
Thin Solid Films, 418(2), 197, 2002
54 Carbonization induced change of polarity for MBE grown 3C-SiC/Si(111)
Pezoldt J, Schroter B, Cimalla V, Stauden T, Goldhahn R, Romanus H, Spiess L
Materials Science Forum, 353-356, 179, 2001
55 The influence of Ge on the SiC nucleation on (111)Si surfaces
Pezoldt J, Wohner T, Stauden T, Schaefer JA, Masri P
Materials Science Forum, 353-356, 183, 2001
56 In situ RHEED studies on the influence of Ge on the early stages of SiC on Si(111) and (100) surfaces
Cimalla V, Zekentes K, Tsagstraki K, Stauden T, Scharmann F, Pezoldt J
Materials Science Forum, 353-356, 187, 2001
57 Polytype and polarity of silicon carbide and aluminium nitride films growing by MBE: A nondestructive identification
Schroter B, Winkelmann A, Fissel A, Lebedev V, Richter W
Materials Science Forum, 353-356, 227, 2001
58 Germanium an SiC(0001): Surface structure and nanocrystals
Schroter B, Komlev K, Kaiser U, Hess G, Kipshidze G, Richter W
Materials Science Forum, 353-356, 247, 2001
59 Analysis of strain and defect formation in low-dimensional structures in SiC
Kaiser U, Saitoh K, Chuvilin A
Materials Science Forum, 353-356, 259, 2001
60 Epitaxial growth and properties of SiC layers grown on alpha-SiC(0001) by solid-source MBE: A photoluminescence study
Fissel A, Richter W
Materials Science Forum, 353-356, 409, 2001