화학공학소재연구정보센터
검색결과 : 268건
No. Article
51 Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET
Hung SC, Luan QP, Lin HY, Li SG, Chang SJ
Current Applied Physics, 13(8), 1577, 2013
52 InGaAs quantum-dot-in-ring structure by droplet epitaxy
Boonpeng P, Kiravittaya S, Thainoi S, Panyakeow S, Ratanathammaphan S
Journal of Crystal Growth, 378, 435, 2013
53 Broadband InGaAs quantum dot-in-a-well solar cells of p-type wells
Tzeng TE, Chuang KY, Lay TS, Chang CH
Journal of Crystal Growth, 378, 583, 2013
54 InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
Teng T, Xu AH, Ai LK, Sun H, Qi M
Journal of Crystal Growth, 378, 618, 2013
55 Microdisk cavity laser with InGaAs quantum dots on AlAs/GaAs distributed Bragg reflector
Hsing JY, Tzeng TE, Kuo MY, Lay TS, Shih MH
Journal of Crystal Growth, 378, 622, 2013
56 Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
Wu J, Borg BM, Jacobsson D, Dick KA, Wernersson LE
Journal of Crystal Growth, 383, 158, 2013
57 An improved model for InP/InGaAs double heterojunction bipolar transistors
Shi YX, Jin Z, Su YB, Cao YX, Wang Y
Solid-State Electronics, 81, 163, 2013
58 La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
Zadeh DH, Oomine H, Suzuki Y, Kakushima K, Ahmet P, Nohira H, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H
Solid-State Electronics, 82, 29, 2013
59 Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in In GaAs metal-oxide-semiconductor field-effect transistors
Kong EYJ, Ivana, Zhang XG, Zhou Q, Pan JS, Zhang Z, Yeo YC
Solid-State Electronics, 85, 36, 2013
60 Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
Negara MA, Djara V, O'Regan TP, Cherkaoui K, Burke M, Gomeniuk YY, Schmidt M, O'Connor E, Povey IM, Quinn AJ, Hurley PK
Solid-State Electronics, 88, 37, 2013