검색결과 : 268건
No. | Article |
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51 |
Embedded-Ge source and drain in InGaAs/GaAs dual channel MESFET Hung SC, Luan QP, Lin HY, Li SG, Chang SJ Current Applied Physics, 13(8), 1577, 2013 |
52 |
InGaAs quantum-dot-in-ring structure by droplet epitaxy Boonpeng P, Kiravittaya S, Thainoi S, Panyakeow S, Ratanathammaphan S Journal of Crystal Growth, 378, 435, 2013 |
53 |
Broadband InGaAs quantum dot-in-a-well solar cells of p-type wells Tzeng TE, Chuang KY, Lay TS, Chang CH Journal of Crystal Growth, 378, 583, 2013 |
54 |
InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy Teng T, Xu AH, Ai LK, Sun H, Qi M Journal of Crystal Growth, 378, 618, 2013 |
55 |
Microdisk cavity laser with InGaAs quantum dots on AlAs/GaAs distributed Bragg reflector Hsing JY, Tzeng TE, Kuo MY, Lay TS, Shih MH Journal of Crystal Growth, 378, 622, 2013 |
56 |
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy Wu J, Borg BM, Jacobsson D, Dick KA, Wernersson LE Journal of Crystal Growth, 383, 158, 2013 |
57 |
An improved model for InP/InGaAs double heterojunction bipolar transistors Shi YX, Jin Z, Su YB, Cao YX, Wang Y Solid-State Electronics, 81, 163, 2013 |
58 |
La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode Zadeh DH, Oomine H, Suzuki Y, Kakushima K, Ahmet P, Nohira H, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H Solid-State Electronics, 82, 29, 2013 |
59 |
Investigation of Pd-InGaAs for the formation of self-aligned source/drain contacts in In GaAs metal-oxide-semiconductor field-effect transistors Kong EYJ, Ivana, Zhang XG, Zhou Q, Pan JS, Zhang Z, Yeo YC Solid-State Electronics, 85, 36, 2013 |
60 |
Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs Negara MA, Djara V, O'Regan TP, Cherkaoui K, Burke M, Gomeniuk YY, Schmidt M, O'Connor E, Povey IM, Quinn AJ, Hurley PK Solid-State Electronics, 88, 37, 2013 |