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Influence of sputtering a ZnMgO window layer on the interface and bulk properties of Cu(In,Ga)Se-2 solar cells Li JV, Li XN, Yan YF, Jiang CS, Metzger WK, Repins IL, Contreras MA, Levi DH Journal of Vacuum Science & Technology B, 27(6), 2384, 2009 |
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Ge1-ySny photoconductor structures at 1.55 mu m: From advanced materials to prototype devices Roucka R, Xie J, Kouvetakis J, Mathews J, D'Costa V, Menendez J, Tolle J, Yu SQ Journal of Vacuum Science & Technology B, 26(6), 1952, 2008 |
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Current-voltage analysis of a-Si : H Schottky diodes Sahin M, Durmus H, Kaplan R Applied Surface Science, 252(18), 6269, 2006 |
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Analytical non-linear charge control model for InAlAs/InGaAs/InAlAs double heterostructure high electron mobility transistor (DH-HEMT) Gupta R, Kumar S, Gupta AM, Gupta RS Solid-State Electronics, 49(2), 167, 2005 |
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Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor Moon JW, Choi YK, Chung SK Solid-State Electronics, 49(5), 834, 2005 |
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Controlling carrier density and its effect on I-V characteristics of the anatase-TiO2 thin films prepared by a sputter deposition method Dorjpalam E, Takahashi M, Tokuda Y, Yoko T Thin Solid Films, 483(1-2), 147, 2005 |
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Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy Ujihara T, Munetoh S, Kusunoki K, Kamei K, Usami N, Fujiwara K, Sazaki G, Nakajima K Materials Science Forum, 457-460, 633, 2004 |
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Study of improved reverse recovery in power transistor incorporating universal contact Anand RS, Mazhari B, Narain J Solid-State Electronics, 48(5), 655, 2004 |
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A field effect transistor using highly nitrogen-doped CVD diamond for power device applications Yokoyama Y, Li XQ, Sheng K, Mihaila A, Traikovic T, Udrea F, Amaratunga GAJ, Okano K Applied Surface Science, 216(1-4), 483, 2003 |
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Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy Higashiwaki M, Matsui T Journal of Crystal Growth, 252(1-3), 128, 2003 |