화학공학소재연구정보센터
검색결과 : 56건
No. Article
51 Combined silicon, beryllium, and carbon tetrabromide single-port dopant source for molecular-beam epitaxy
Moshegov NT, Nordquist CD, Cai WZ, Mayer TS, Lubyshev DI, Miller DL
Journal of Vacuum Science & Technology B, 19(4), 1541, 2001
52 Electrical properties of modulation-doped InxAl1-xAs/InyGa1-yAs structures on GaAs and InP substrates with 0.2 <= x, y <= 0.8
Cai WZ, Wang ZM, Miller DL
Journal of Vacuum Science & Technology B, 18(3), 1633, 2000
53 A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide
Lubyshev D, Micovic M, Gratteau N, Cai WZ, Miller DL, Ray O, Streater RW, SpringThorpe AJ
Journal of Vacuum Science & Technology B, 17(3), 1180, 1999
54 Heavily carbon-doped In0.53Ga0.47As on InP (001) substrate grown by solid source molecular beam epitaxy
Cai WZ, Lubyshev DI, Miller DL, Streater RW, SpringThorpe AJ
Journal of Vacuum Science & Technology B, 17(3), 1190, 1999
55 Iodine and carbon tetrabromide use in solid source molecular beam epitaxy
Miller DL, Micovic M, Lubyshev DI, Cai WZ, Hwang WY, Zhang K
Journal of Vacuum Science & Technology B, 16(3), 1361, 1998
56 Microphase Structure and Calculations of the Interphase in Poly(Styrene-B-Methylphenylsiloxane) Diblock Copolymers - A Comparative-Study from Small-Angle X-Ray-Scattering, Electron Spectroscopic Imaging and Solid-State Nuclear-Magnetic-Resonance
Gerharz B, Duchesne A, Lieser G, Fischer EW, Cai WZ
Journal of Materials Science, 31(4), 1053, 1996