화학공학소재연구정보센터
검색결과 : 87건
No. Article
41 Defining new frontiers in electronic devices with high kappa dielectrics and interfacial engineering
Hong M, Lee WC, Huang ML, Chang YC, Lin TD, Lee YJ, Kwo J, Hsu CH, Lee HY
Thin Solid Films, 515(14), 5581, 2007
42 Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics
Chang KW, Chang FM, Ruzyllo J
Solid-State Electronics, 50(9-10), 1670, 2006
43 Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46-1.93 nm) high-K gate dielectrics
Kar S
Thin Solid Films, 504(1-2), 178, 2006
44 Interface control in the laser MBE growth of hafnium oxide
Lu YK, Zhu W, Chen XF, Gopalkrishnan R
Thin Solid Films, 504(1-2), 188, 2006
45 Comparison between SiO2 films deposited by atomic layer deposition with SiH2[N(CH3)(2)](2) and SiH[N(CH3)(2)](3) precursors
Kamiyama S, Miura T, Nara Y
Thin Solid Films, 515(4), 1517, 2006
46 ZrO 2 MIM 캐패시터의 구조, 표면 형상 및 전기적 특성
김대규, 이종무
Korean Journal of Materials Research, 15(2), 139, 2005
47 Tunneling 1/f(gamma) noise in 5 nm HfO2/2.1 nm SiO2 gate stack n-MOSFETs
Simoen E, Mercha A, Pantisano L, Claeys C, Young E
Solid-State Electronics, 49(5), 702, 2005
48 Physical and electrical properties of ZrO2 and YSZ high-k gate dielectric thin films grown by RF magnetron sputtering
Jeong SH, Bae IS, Shin YS, Lee SB, Kwak HT, Boo JH
Thin Solid Films, 475(1-2), 354, 2005
49 Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric
Wang Q, Song ZT, Liu WL, Lin CL, Wang TH
Applied Surface Science, 230(1-4), 8, 2004
50 The influence of oxygen on the Hf signal intensity in the characterization of HfO2/Si stacks
Huyghebaert C, Conard T, Vandervorst W
Applied Surface Science, 231-2, 552, 2004