화학공학소재연구정보센터
검색결과 : 56건
No. Article
41 Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy
Moon YT, Kim DJ, Park JS, Oh JT, Kim YS, Park NM, Kim BH, Park SJ
Journal of Crystal Growth, 248, 494, 2003
42 Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application
Morimoto R, Yokomori C, Kikkawa A, Izumi A, Matsumura H
Thin Solid Films, 430(1-2), 230, 2003
43 Dependence of TFT performance on the dielectric characteristics
Lavareda G, de Carvalho CN, Amaral A, Fortunato E, Ramos AR, da Silva ME
Thin Solid Films, 427(1-2), 71, 2003
44 A Cat-CVD Si3N4 film study and its application to the ULSI process
Uchiyama Y, Masuda A, Matsumura H
Thin Solid Films, 395(1-2), 275, 2001
45 Preparation of SiNx passivation films for PZT ferroelectric capacitors at low substrate temperatures by catalytic CVD
Minamikawa T, Yonezawa Y, Heya A, Fujimori Y, Nakamura T, Masuda A, Matsumura H
Thin Solid Films, 395(1-2), 284, 2001
46 The growth and characterization of 3C-SiC/SiNx/Si structure
Kim KC, Park CI, Nahm KS, Suh EK
Materials Science Forum, 338-3, 317, 2000
47 High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties
Hugon MC, Delmotte F, Agius B, Irene EA
Journal of Vacuum Science & Technology B, 17(4), 1430, 1999
48 A new layer system of anti-reflective coating for cathode ray tubes
Oyama T, Ohsaki H, Tachibana Y, Hayashi Y, Ono Y, Horie N
Thin Solid Films, 351(1-2), 235, 1999
49 Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method
Garcia S, Martin JM, Martil I, Fernandez M, Gonzalez-Diaz G
Thin Solid Films, 317(1-2), 116, 1998
50 Dependence of the physical properties of SiNx : H films deposited by the ECR plasma method on the discharge size
Garcia S, Martin JM, Martil I, Gonzalez-Diaz G
Thin Solid Films, 315(1-2), 22, 1998