화학공학소재연구정보센터
검색결과 : 1,949건
No. Article
41 First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy
Bui KM, Iwata JI, Kangawa Y, Shiraishi K, Shigeta Y, Oshiyama A
Journal of Crystal Growth, 507, 421, 2019
42 Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs
Kumagai N, Takahashi T, Yamada H, Cong GW, Wang XL, Shimizu M
Journal of Crystal Growth, 507, 437, 2019
43 Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy
Wu YZ, Bin L, Li ZH, Tao T, Xie ZL, Xiu XQ, Chen P, Chen DJ, Lu H, Shi Y, Zhang R, Zheng YD
Journal of Crystal Growth, 506, 30, 2019
44 Vanishing biexciton binding energy from stacked, MOVPE grown, site-controlled pyramidal quantum dots for twin photon generation
Moroni ST, Varo S, Juska G, Chung TH, Gocalinska A, Pelucchi E
Journal of Crystal Growth, 506, 36, 2019
45 Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
Miyoshi M, Yamanaka M, Egawa T, Takeuchi T
Journal of Crystal Growth, 506, 40, 2019
46 Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD
Anandan D, Kakkerla RK, Yu HW, Ko HL, Nagarajan V, Singh SK, Lee CT, Chang EY
Journal of Crystal Growth, 506, 45, 2019
47 Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates
France RM, Feifel M, Belz J, Beyer A, Volz K, Ohlmann J, Lackner D, Dimroth F
Journal of Crystal Growth, 506, 61, 2019
48 Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE
Minami Y, Yoshida A, Motohisa J, Tomioka K
Journal of Crystal Growth, 506, 135, 2019
49 Early history of MOVPE reactor development
Wang CA
Journal of Crystal Growth, 506, 190, 2019
50 GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity
Pelati D, Patriarche G, Mauguin O, Largeau L, Travers L, Brisset F, Glas F, Oehler F
Journal of Crystal Growth, 519, 84, 2019