화학공학소재연구정보센터
검색결과 : 51건
No. Article
41 Effect of rapid thermal annealing an the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy
Liu HF, Chen H, Xu M, Wan L, Mai ZH, Huang Q, Zhou JM
Journal of Crystal Growth, 222(3), 503, 2001
42 RF 스퍼터링법으로 사파이어 기판 위에 성장한 ZnO와 ZnO : A1 박막의 질소 및 수소 후열처리에 따른 Photoluminescence 특성
조정, 윤기현, 정형진, 최원국
Korean Journal of Materials Research, 11(10), 889, 2001
43 Source resistance analysis of SiC-MESFET
Arai M, Ogata M, Honda H, Sawazaki H, Nakagawa A, Kitamura M
Materials Science Forum, 353-356, 711, 2001
44 Channel engineering using RTA prior to the gate oxidation for high density DRAM with single gate CMOS technology
Son JH, Lee SH, Lee JS, Lee Y
Solid-State Electronics, 45(1), 7, 2001
45 Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature
Hwang CC, Juang MH, Lai MJ, Jaing CC, Chen JS, Huang S, Cheng HC
Solid-State Electronics, 45(1), 121, 2001
46 Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process
Lim DG, Jang BS, Moon SI, Won CY, Yi J
Solid-State Electronics, 45(7), 1159, 2001
47 A study of transparent indium tin oxide (ITO) contact to p-GaN
Kim DW, Sung YJ, Park JW, Yeom GY
Thin Solid Films, 398-399, 87, 2001
48 Preparation of (Ba0.5Sr0.5) TiO3 thin films by sol-gel method with rapid thermal annealing
Wu D, Li AD, Ling HQ, Yin XB, Ge CZ, Wang M, Ming NB
Applied Surface Science, 165(4), 309, 2000
49 Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol-gel technique
Meng XJ, Cheng JG, Li B, Guo SL, Ye HJ, Chu JH
Journal of Crystal Growth, 208(1-4), 541, 2000
50 High barrier iridium silicide Schottky contacts on Si fabricated by rapid thermal annealing
Sanz-Maudes J, Jimenez-Luebe FJ, Clement M
Journal of Vacuum Science & Technology B, 17(2), 397, 1999