화학공학소재연구정보센터
검색결과 : 48건
No. Article
41 Effects of W doping and annealing parameters on the ferroelectricity and fatigue properties of sputtered Bi3.25La0.75Ti3O12 films
Lin WT, Chiu TW, Yu HH, Lin JL, Lin MS
Journal of Vacuum Science & Technology A, 21(3), 787, 2003
42 Formation of Hf ohmic contacts by surface treatment of n-GaN in KOH solutions
Chung MS, Lin WT, Gong JR
Journal of Vacuum Science & Technology B, 19(5), 1976, 2001
43 Influences of temperature ramping rate on GaN buffer layers and subsequent GaN overlayers grown by metalorganic chemical vapor deposition
Wuu DS, Horng RH, Tseng WH, Lin WT, Kung CY
Journal of Crystal Growth, 220(3), 235, 2000
44 Growth characteristics of GaN on (001)GaP substrates by MOVPE
Wuu DS, Lin WT, Pan CC, Horng RH
Journal of Crystal Growth, 221, 286, 2000
45 Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy
Luo JS, Lin WT, Chang CY, Shih PS, Pan FM
Journal of Vacuum Science & Technology A, 18(1), 143, 2000
46 Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C
Luo JS, Lin WT, Chang CY, Shih PS
Thin Solid Films, 346(1-2), 207, 1999
47 Experimental Investigation of Geyser Boiling in an Annular 2-Phase Closed Thermosiphon
Lin TF, Lin WT, Tsay YL, Wu JC, Shyu RJ
International Journal of Heat and Mass Transfer, 38(2), 295, 1995
48 Syntheses and Cured Films Properties of UV-Autocurable BTDA-Based Multiacrylate Resins
Chiang WY, Lin WT
Journal of Applied Polymer Science, 51(11), 1901, 1994