41 |
Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties Jeong SH, Lim DC, Jee HG, Moon OM, Jung CK, Moon JS, Kim SK, Lee SB, Boo JH Journal of Vacuum Science & Technology B, 22(4), 2216, 2004 |
42 |
Deposition of epitaxial silicon carbide films using high vacuum MOCVD method for MEMS applications Lim DC, Jee HG, Kim JW, Moon JS, Lee SB, Choi SS, Boo JH Thin Solid Films, 459(1-2), 7, 2004 |
43 |
Growth of cubic SiC thin films on Si(001) by high vacuum chemical vapor deposition using 1,3-disilabutane and an investigation of the effect of deposition pressure Boo JH, Lim DC, Lee SB, Lee KW, Sung MM, Kim Y, Yu KS Journal of Vacuum Science & Technology B, 21(4), 1870, 2003 |
44 |
Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition Chen GC, Lim DC, Lee SB, Boo JH, Kim YJ, Hong BY Journal of Vacuum Science & Technology B, 21(4), 1886, 2003 |
45 |
Solvent Effects on the Ring-Opening of Cyclopropanones to Oxyallyls - A Combined Ab-Initio and Monte-Carlo Study Lim DC, Hrovat DA, Borden WT, Jorgensen WL Journal of the American Chemical Society, 116(8), 3494, 1994 |