화학공학소재연구정보센터
검색결과 : 52건
No. Article
41 Investigation of the Hf-based gate dielectrics deposited by reactive sputtering in oxygen or nitrogen atmosphere
Lu CH, Lai YS, Chen JS
Journal of the Electrochemical Society, 153(9), F189, 2006
42 Energy dependence of radiation damage in Sb-implanted Si(100)
Lai YS, Chen JS, Ho YS, Sun HL, Tsai CJ, Chen TC, Ko YF, Lee FS, You WM
Journal of the Electrochemical Society, 152(7), G511, 2005
43 Comparison of thermal stability and chemical bonding configurations of plasma oxynitrided Hf and Zr thin films
Lai YS, Lu CH, Chen LM, Chen JS
Journal of the Electrochemical Society, 152(9), F146, 2005
44 Effect of heat treatment on the properties of non-stoichiometric p-type nickel oxide films deposited by reactive sputtering
Yang JL, Lai YS, Chen JS
Thin Solid Films, 488(1-2), 242, 2005
45 Interlayer growth and electrical behavior of Ta2O5/SiOxNy/Si gate stacks
Lai YS, Chen JS, Wang JL
Journal of the Electrochemical Society, 151(6), F135, 2004
46 Effect of polyvinyl pyrrolidone molecular weights on the formation of nanosized silver colloids
Chou KS, Lai YS
Materials Chemistry and Physics, 83(1), 82, 2004
47 Machine modeling and universal controller for vector-controlled induction motor drives
Lai YS
IEEE Transactions on Energy Conversion, 18(1), 23, 2003
48 Evolution of chemical bonding configuration in ultrathin SiOxNy layers grown by low-temperature plasma nitridation
Lai YS, Chen JS
Journal of Vacuum Science & Technology A, 21(3), 772, 2003
49 Effects of plasma prenitridation and postdeposition annealing on the structural and dielectric characteristics of the Ta2O5/Si system
Lai YS, Chen KJ, Chen JS
Journal of the Electrochemical Society, 149(7), F63, 2002
50 Spectroscopic ellipsometry study on the structure of Ta2O5/SiOxNy/Si gate dielectric stacks
Lai YS, Chen JS
Thin Solid Films, 420-421, 117, 2002