화학공학소재연구정보센터
검색결과 : 127건
No. Article
41 Electronic Structure of Cerium Oxide Gate Dielectric Grown by Plasma-Enhanced Atomic Layer Deposition
Kim WH, Maeng WJ, Kim MK, Gatineau J, Kim H
Journal of the Electrochemical Society, 158(10), G217, 2011
42 Fabrication and Characterization of Erbium-Doped Polymer Patterns by Lift-Off Process for Planar Optical Amplifiers
Kim WH, Choi MS, Han YS
Molecular Crystals and Liquid Crystals, 551, 273, 2011
43 Fabrication and Characterization of Erbium-Doped Fluoropolymer Patterns via UV-Nanoimprint Lithography for Use in Planar Optical Amplifiers
Kim WH, Choi MS, Han YS
Molecular Crystals and Liquid Crystals, 551, 318, 2011
44 cAMP-response element binding protein (CREB) positively regulates mouse adiponectin gene expression in 3T3-L1 adipocytes
Kim HB, Kim WH, Han KL, Park JH, Lee J, Yeo J, Jung MH
Biochemical and Biophysical Research Communications, 391(1), 634, 2010
45 Identification of the KAI1 metastasis suppressor gene as a hypoxia target gene
Kim B, Boo K, Lee JS, Kim KI, Kim WH, Cho HJ, Park YB, Kim HS, Baek SH
Biochemical and Biophysical Research Communications, 393(1), 179, 2010
46 The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrOxNy Gate Dielectrics
Jung HS, Park JM, Kim HK, Kim JH, Won SJ, Lee J, Lee SY, Hwang CS, Kim WH, Song MW, Lee NI, Cho DY
Electrochemical and Solid State Letters, 13(9), G71, 2010
47 Origins of Stereoselectivity in the trans Diels-Alder Paradigm
Paton RS, Mackey JL, Kim WH, Lee JH, Danishefsky SJ, Houk KN
Journal of the American Chemical Society, 132(27), 9335, 2010
48 High Quality Area-Selective Atomic Layer Deposition Co Using Ammonia Gas as a Reactant
Lee HBR, Kim WH, Lee JW, Kim JM, Heo K, Hwang IC, Park Y, Hong S, Kim H
Journal of the Electrochemical Society, 157(1), D10, 2010
49 Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO2 Gate Dielectrics and Metal Gate
Jung HS, Kim JH, Lee J, Lee SY, Kim UK, Hwang CS, Park JM, Kim WH, Song MW, Lee NI
Journal of the Electrochemical Society, 157(3), H355, 2010
50 Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfOxNy Gate Dielectrics
Jung HS, Kim HK, Kim JH, Won SJ, Cho DY, Lee J, Lee SY, Hwang CS, Park JM, Kim WH, Song MW, Lee NI, Heo S
Journal of the Electrochemical Society, 157(5), G121, 2010