41 |
Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces Ishikawa F, Hasegawa H Applied Surface Science, 190(1-4), 508, 2002 |
42 |
Islet-neogenesis-associated protein enhances neurite outgrowth from DRG neurons Tam J, Rosenberg L, Maysinger D Biochemical and Biophysical Research Communications, 291(3), 649, 2002 |
43 |
InGaP/GaAs camel-gate field effect transistor with double delta-doping channel profiles Tsai JH Materials Chemistry and Physics, 73(2-3), 170, 2002 |
44 |
Characteristics of InGaP/GaAs co-integrated delta-doped heterojunction bipolar transistor and doped-channel field effect transistor Tsai JH Solid-State Electronics, 46(1), 45, 2002 |
45 |
Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors Baca AG, Monier C, Chang PC, Briggs RD, Armendariz MG, Pearton SJ Solid-State Electronics, 46(6), 797, 2002 |
46 |
The influence of InGaP barrier layer on the characteristics of 1.3 mu m strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes Lee CY, Jiang WJ, Wu MC, Ho WJ Solid-State Electronics, 46(9), 1389, 2002 |
47 |
High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates Takamoto T, Agui T, Ikeda E, Kurita H Solar Energy Materials and Solar Cells, 66(1-4), 511, 2001 |
48 |
Characteristics of GaAs-based concentrator cells Araki K, Yamaguchi M, Takamoto T, Ikeda E, Agui T, Kurita H, Takahashi K, Unno T Solar Energy Materials and Solar Cells, 66(1-4), 559, 2001 |
49 |
Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application Akahori K, Wang G, Okumura K, Soga T, Jimbo T, Umeno M Solar Energy Materials and Solar Cells, 66(1-4), 593, 2001 |
50 |
Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6 Goto S, Ueda T, Yamagishi C Solar Energy Materials and Solar Cells, 66(1-4), 631, 2001 |