화학공학소재연구정보센터
검색결과 : 49건
No. Article
41 Interface properties of 4H-SiC/SiO2 with MOS capacitors and FETs annealed in O-2, N2O, NO and CO2
Wang W, Banerjee S, Chow TP, Gutmann RJ, Issacs-Smith T, Williams J, Jones KA, Lelis A, Tipton W, Scozzie S, Agarwal A
Materials Science Forum, 457-460, 1309, 2004
42 930V, 170m Omega.cm(2) lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing
Wang W, Banerjee S, Chow TP, Gutmann RJ
Materials Science Forum, 457-460, 1413, 2004
43 Effects of O-2 and H2O on electrical characteristics of pentacene thin film transistors
Ye RB, Baba M, Suzuki K, Ohishi Y, Mori K
Thin Solid Films, 464-65, 437, 2004
44 High hole and electron field effect mobilities in nanocrystalline silicon deposited at 150 degrees C
Cheng IC, Wagner S
Thin Solid Films, 427(1-2), 56, 2003
45 4H-SiC ACCUFET with a two-layer stacked gate oxide
Kaneko S, Tanaka H, Shimoida Y, Kiritani N, Tanimoto S, Yamanaka M, Hoshi M
Materials Science Forum, 389-3, 1073, 2002
46 Characterization of pentacene organic thin film transistors fabricated on SiNx films by non-photolithographic processes
Choo MH, Hong WS, Im S
Thin Solid Films, 420-421, 492, 2002
47 Full band Monte Carlo study of bulk and surface transport properties in 4H and 6H-SiC
Hjelm M, Bertilsson K, Nilsson HE
Applied Surface Science, 184(1-4), 194, 2001
48 Process dependence of inversion layer mobility in 4H-SiC devices
Alok D, Arnold E, Egloff R
Materials Science Forum, 338-3, 1077, 2000
49 Electrical characteristics of pentacene organic thin film transistors with silicon dioxide gate insulator
Choi JS, Kim DY, Lee JH, Kang DY, Kim YK, Shin DM
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals, 349, 339, 2000