검색결과 : 142건
| No. | Article |
|---|---|
| 41 |
Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates Onuma T, Nozaka T, Yamaguchi H, Suzuki T, Chichibu SF Journal of Crystal Growth, 298, 193, 2007 |
| 42 |
Growth of cubic SiC single crystals by the physical vapor transport technique Semmelroth K, Krieger M, Pensl G, Nagasawa H, Puesche R, Hundhausen M, Ley L, Nerding M, Strunk HP Journal of Crystal Growth, 308(2), 241, 2007 |
| 43 |
Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations Zhu WL, Zhu JL, Nishino S, Pezzotti G Applied Surface Science, 252(6), 2346, 2006 |
| 44 |
Reduction in double-positioning boundaries in 3C-SiC epitaxial films fabricated on Si (111) substrates Kusumori T, Muto H, Okada M, Jin P Thin Solid Films, 513(1-2), 307, 2006 |
| 45 |
SiC epitaxial growth on Si(001) substrates using a BP buffer layer Abe Y, Komiyama J, Suzuki S, Nakanishi H Journal of Crystal Growth, 283(1-2), 41, 2005 |
| 46 |
Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method Sugishita S, Shoji A, Mukai Y, Nishiguchi T, Michikami K, Issiki T, Ohshima S, Nishino S Materials Science Forum, 483, 177, 2005 |
| 47 |
Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate Nakamura M, Isshiki T, Nishiguchi T, Nishio K, Ohshima S, Nishino S Materials Science Forum, 483, 181, 2005 |
| 48 |
Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrate by hetero-epitaxial CVD method Isshiki T, Nakamura M, Nishiguchi T, Nishio K, Ohshima S, Nishino S Materials Science Forum, 483, 185, 2005 |
| 49 |
Suppression of the twin formation in CVD growth of (111) 3C-SiC on (110) Si substrate Nishiguchi T, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S Materials Science Forum, 483, 193, 2005 |
| 50 |
Regrowth of 3C-SiC on CMP treated 3C-SiC/Si epitaxial layers Mank H, Moisson C, Turover D, Twigg M, Saddow SE Materials Science Forum, 483, 197, 2005 |