화학공학소재연구정보센터
검색결과 : 142건
No. Article
41 Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates
Onuma T, Nozaka T, Yamaguchi H, Suzuki T, Chichibu SF
Journal of Crystal Growth, 298, 193, 2007
42 Growth of cubic SiC single crystals by the physical vapor transport technique
Semmelroth K, Krieger M, Pensl G, Nagasawa H, Puesche R, Hundhausen M, Ley L, Nerding M, Strunk HP
Journal of Crystal Growth, 308(2), 241, 2007
43 Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations
Zhu WL, Zhu JL, Nishino S, Pezzotti G
Applied Surface Science, 252(6), 2346, 2006
44 Reduction in double-positioning boundaries in 3C-SiC epitaxial films fabricated on Si (111) substrates
Kusumori T, Muto H, Okada M, Jin P
Thin Solid Films, 513(1-2), 307, 2006
45 SiC epitaxial growth on Si(001) substrates using a BP buffer layer
Abe Y, Komiyama J, Suzuki S, Nakanishi H
Journal of Crystal Growth, 283(1-2), 41, 2005
46 Lateral epitaxial overgrowth of 3C-SiC on Si substrates by CVD method
Sugishita S, Shoji A, Mukai Y, Nishiguchi T, Michikami K, Issiki T, Ohshima S, Nishino S
Materials Science Forum, 483, 177, 2005
47 Suppression mechanism of double positioning growth in 3C-SiC(111) crystal by using an off-axis Si(110) substrate
Nakamura M, Isshiki T, Nishiguchi T, Nishio K, Ohshima S, Nishino S
Materials Science Forum, 483, 181, 2005
48 Influence of substrate roughness on the formation of defects in 3C-SiC grown on Si(110) substrate by hetero-epitaxial CVD method
Isshiki T, Nakamura M, Nishiguchi T, Nishio K, Ohshima S, Nishino S
Materials Science Forum, 483, 185, 2005
49 Suppression of the twin formation in CVD growth of (111) 3C-SiC on (110) Si substrate
Nishiguchi T, Nakamura M, Nishio K, Isshiki T, Ohshima S, Nishino S
Materials Science Forum, 483, 193, 2005
50 Regrowth of 3C-SiC on CMP treated 3C-SiC/Si epitaxial layers
Mank H, Moisson C, Turover D, Twigg M, Saddow SE
Materials Science Forum, 483, 197, 2005