화학공학소재연구정보센터
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No. Article
41 Electroluminescence of p-3C-SiC/n-6H-SiC heterodiodes, grown by sublimation epitaxy in vacuum
Lebedev AA, Stel'chuk AM, Kuznetsov AN, Savkina NS
Materials Science Forum, 457-460, 597, 2004
42 A closed-form expression to analyze electronic properties in delta-doped heterostructures
Chen XY, Nabet B
Solid-State Electronics, 48(12), 2321, 2004
43 Piezoelectric효과와 열 효과 모델링을 고려한 AlGaN/GaN HFET의 DC 특성
박승욱, 황웅준, 신무환
Korean Journal of Materials Research, 13(12), 769, 2003
44 Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel
Sasic R, Cevizovic D, Ramovic R
Materials Science Forum, 413, 39, 2003
45 Nitride-based 2DEG photodetectors with a large AC responsivity
Chang SJ, Kuan TM, Ko CH, Su YK, Webb JB, Bardwell JA, Liu Y, Tang H, Lin WJ, Cherng YT, Lan WH
Solid-State Electronics, 47(11), 2023, 2003
46 Surface and interface electronic properties of group III-nitride heterostructures
Rizzi A
Applied Surface Science, 190(1-4), 311, 2002
47 Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures
Ardaravicius L, Liberis J, Matulionis A, Mel'tser BY, Solov'ev VA, Shubina TV, Ivanov SV, Kop'ev PS
Materials Science Forum, 384-3, 117, 2002
48 Investigation of p-3C-SiC/n+-6H-SiC heterojunctions with low doped p-3C-SiC region
Lebedev AA, Strel'chuk AM, Savkina NS, Bogdanova EV, Tregubova AS, Kuznetsov AN, Davydov DV
Materials Science Forum, 433-4, 427, 2002
49 Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)
Lahreche H, Vennegues P, Tottereau O, Laugt M, Lorenzini P, Leroux M, Beaumont B, Gibart P
Journal of Crystal Growth, 217(1-2), 13, 2000
50 Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors
Dimitrov R, Tilak V, Yeo W, Green B, Kim H, Smart J, Chumbes E, Shealy JR, Schaff W, Eastman LF, Miskys C, Ambacher O, Stutzmann M
Solid-State Electronics, 44(8), 1361, 2000