화학공학소재연구정보센터
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No. Article
31 Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (111) by metalorganic chemical vapor deposition
Chernykh MY, Ezubchenko IS, Mayboroda IO, Zanaveskin ML
Journal of Crystal Growth, 507, 200, 2019
32 Selective-area growth of magnetic MnAs nanodisks on Si (111) substrates using multiple types of dielectric masks
Horiguchi R, Hara S, Iida M, Morita K
Journal of Crystal Growth, 507, 226, 2019
33 Magnetization characterization of MnAs nanoclusters at close range in bended MnAs/InAs heterojunction nanowires
Kodaira R, Horiguchi R, Hara S
Journal of Crystal Growth, 507, 241, 2019
34 Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy
Elleuch O, Lekhal K, Guan YX, Kuech TF
Journal of Crystal Growth, 507, 255, 2019
35 Effect of buffer layer structure on the structural properties of GaAs epitaxial layers grown on GaP substrates
Imaizumi M, Hirotani M, Soga T, Umeno M
Journal of Crystal Growth, 507, 288, 2019
36 Influence of quartz on silicon incorporation in HVPE grown AlN
Fleischmann S, Richter E, Mogilatenko A, Weyers M, Trankle G
Journal of Crystal Growth, 507, 295, 2019
37 Characteristics of aluminum nitride films on hexagonal boron nitride buffer layers using various growth methods through metal organic chemical vapor deposition
Han M, Ryu BD, Ko KB, Jo CH, Lim CH, Cuong TV, Han N, Hong CH
Journal of Crystal Growth, 507, 316, 2019
38 Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy
Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI
Journal of Crystal Growth, 507, 357, 2019
39 Atomic step-flow epitaxy of low defect InGaAs islands on Si(111) by micro-channel selective area MOVPE
Fu YF, Otake N, Tachino Y, Watanabe T, Sugiyama M
Journal of Crystal Growth, 507, 384, 2019
40 Assessing epitaxial regrowth material quality on a micro-transfer printed GaAs substrate
Schmieder KJ, Lumb MP, Bennett MF, Haughn CR, Mack S, Yakes MK, Maximenko SI, Walters RJ
Journal of Crystal Growth, 507, 402, 2019