화학공학소재연구정보센터
검색결과 : 96건
No. Article
31 Epitaxial-like Growth of Anisotropic Mesostructure on an Anisotropic Surface of an Oblique Nanocolumnar Structure
Miyata H, Kubo W, Sakai A, Ishida Y, Noma T, Watanabe M, Bendavid A, Martin PJ
Journal of the American Chemical Society, 132(27), 9414, 2010
32 Identification of Functional Elements and Regulatory Circuits by Drosophila modENCODE
Roy S, Ernst J, Kharchenko PV, Kheradpour P, Negre N, Eaton ML, Landolin JM, Bristow CA, Ma LJ, Lin MF, Washietl S, Arshinoff BI, Ay F, Meyer PE, Robine N, Washington NL, Di Stefano L, Berezikov E, Brown CD, Candeias R, Carlson JW, Carr A, Jungreis I, Marbach D, Sealfon R, Tolstorukov MY, Will S, Alekseyenko AA, Artieri C, Booth BW, Brooks AN, Dai Q, Davis CA, Duff MO, Feng X, Gorchakov AA, Gu TT, Henikoff JG, Kapranov P, Li RH, MacAlpine HK, Malone J, Minoda A, Nordman J, Okamura K, Perry M, Powell SK, Riddle NC, Sakai A, Samsonova A, Sandler JE, Schwartz YB, Sher N, Spokony R, Sturgill D, van Baren M, Wan KH, Yang L, Yu C, Feingold E, Good P, Guyer M, Lowdon R, Ahmad K, Andrews J, Berger B, Brenner SE, Brent MR, Cherbas L, Elgin SCR, Gingeras TR, Grossman R, Hoskins RA, Kaufman TC, Kent W, Kuroda MI, Orr-Weaver T, Perrimon N, Pirrotta V, Posakony JW, Ren B, Russell S, Cherbas P, Graveley BR, Lewis S, Micklem G, Oliver B, Park PJ, Celniker SE, Henikoff S, Karpen GH, Lai EC, MacAlpine DM, Stein LD, White KP, Kellis M
Science, 330(6012), 1787, 2010
33 Structural change of direct silicon bonding substrates by interfacial oxide out-diffusion annealing
Kato T, Nakamura Y, Kikkawa J, Sakai A, Toyoda E, Izunome K, Nakatsuka O, Zaima S, Imai Y, Kimura S, Sakata O
Thin Solid Films, 518, S147, 2010
34 Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
Nguyen ND, Rosseel E, Takeuchi S, Everaert JL, Yang L, Goossens J, Moussa A, Clarysse T, Richard O, Bender H, Zaima S, Sakai A, Loo R, Lin JC, Vandervorst W, Caymax M
Thin Solid Films, 518, S48, 2010
35 Low temperature growth of Ge1-xSnx buffer layers for tensile-strained Ge layers
Shimura Y, Tsutsui N, Nakatsuka O, Sakai A, Zaima S
Thin Solid Films, 518, S2, 2010
36 Chronic alcohol consumption prevents 8-hydroxyguanine accumulation in 3'-methyl-4-dimethylaminoazobenzene-treated mouse liver
Hirano T, Sakai A, Ootsuyama Y, Kasai H
Biochemical and Biophysical Research Communications, 387(2), 316, 2009
37 Microstructures in directly bonded Si substrates
Ohara Y, Ueda T, Sakai A, Nakatsuka O, Ogawa M, Zaima S, Toyoda E, Isogai H, Senda T, Izunome K, Tajiri H, Sakata O, Kimura S, Sakata T, Mori H
Solid-State Electronics, 53(8), 837, 2009
38 Novel method to introduce uniaxial tensile strain in Ge by microfabrication of Ge/Si1-xGex structures on Si(001) substrates
Mizutani T, Nakatsuka O, Sakai A, Kondo H, Ogawa M, Zaima S
Solid-State Electronics, 53(11), 1198, 2009
39 Scanning tunneling microscopy observation of initial growth of Sn and Ge1-xSnx layers on Ge(001) substrates
Yamazaki M, Takeuchi S, Nakatsuka O, Sakai A, Ogawa M, Zaima S
Applied Surface Science, 254(19), 6048, 2008
40 Effect of alcohol sources on synthesis of single-walled carbon nanotubes
Oida S, Sakai A, Nakatsuka O, Ogawa M, Zaima S
Applied Surface Science, 254(23), 7697, 2008