검색결과 : 40건
No. | Article |
---|---|
31 |
Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device Saito W, Omura I, Ogura T, Ohashi H Solid-State Electronics, 48(9), 1555, 2004 |
32 |
A new edge termination technique for SiC power devices Hu ST, Sheng K Solid-State Electronics, 48(10-11), 1861, 2004 |
33 |
A field effect transistor using highly nitrogen-doped CVD diamond for power device applications Yokoyama Y, Li XQ, Sheng K, Mihaila A, Traikovic T, Udrea F, Amaratunga GAJ, Okano K Applied Surface Science, 216(1-4), 483, 2003 |
34 |
Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias Felsl HP, Wachutka G Materials Science Forum, 389-3, 1153, 2002 |
35 |
Influence of material properties on wide-bandgap microwave power device characteristics Morvan E, Kerlain A, Dua C, Brylinski C Materials Science Forum, 433-4, 731, 2002 |
36 |
Comments on "A closed form expression for punch-through limited breakdown voltage of parallel-plane junction" He J, Zhang X, Huang R, Wang YY Solid-State Electronics, 45(3), 535, 2001 |
37 |
Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films Wahab Q, Ellison A, Zhang J, Forsberg U, Duranova E, Henry A, Madsen LD, Janzen E Materials Science Forum, 338-3, 1171, 2000 |
38 |
Al/C/B Co-implanted high-voltage 4H-SiC PiN junction rectifiers Fedison JB, Li Z, Khemka V, Ramungul N, Chow TP, Ghezzo M, Kretchmer JW, Elasser A Materials Science Forum, 338-3, 1367, 2000 |
39 |
Monolithic bidirectional switch. I. Device concept Sittig R, Heinke F Solid-State Electronics, 44(8), 1387, 2000 |
40 |
Optimization of vertical 600 and 1500 VSOI-ESTs with low on-state voltages Steck B, Vogt H Solid-State Electronics, 44(12), 2131, 2000 |