화학공학소재연구정보센터
검색결과 : 40건
No. Article
31 Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
Saito W, Omura I, Ogura T, Ohashi H
Solid-State Electronics, 48(9), 1555, 2004
32 A new edge termination technique for SiC power devices
Hu ST, Sheng K
Solid-State Electronics, 48(10-11), 1861, 2004
33 A field effect transistor using highly nitrogen-doped CVD diamond for power device applications
Yokoyama Y, Li XQ, Sheng K, Mihaila A, Traikovic T, Udrea F, Amaratunga GAJ, Okano K
Applied Surface Science, 216(1-4), 483, 2003
34 Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias
Felsl HP, Wachutka G
Materials Science Forum, 389-3, 1153, 2002
35 Influence of material properties on wide-bandgap microwave power device characteristics
Morvan E, Kerlain A, Dua C, Brylinski C
Materials Science Forum, 433-4, 731, 2002
36 Comments on "A closed form expression for punch-through limited breakdown voltage of parallel-plane junction"
He J, Zhang X, Huang R, Wang YY
Solid-State Electronics, 45(3), 535, 2001
37 Designing, physical simulation and fabrication of high-voltage (3.85 kV) 4H-SiC Schottky rectifiers processed on hot-wall and chimney CVD films
Wahab Q, Ellison A, Zhang J, Forsberg U, Duranova E, Henry A, Madsen LD, Janzen E
Materials Science Forum, 338-3, 1171, 2000
38 Al/C/B Co-implanted high-voltage 4H-SiC PiN junction rectifiers
Fedison JB, Li Z, Khemka V, Ramungul N, Chow TP, Ghezzo M, Kretchmer JW, Elasser A
Materials Science Forum, 338-3, 1367, 2000
39 Monolithic bidirectional switch. I. Device concept
Sittig R, Heinke F
Solid-State Electronics, 44(8), 1387, 2000
40 Optimization of vertical 600 and 1500 VSOI-ESTs with low on-state voltages
Steck B, Vogt H
Solid-State Electronics, 44(12), 2131, 2000