31 |
Improvement of the Electrical Characteristics of a-Si:H TFTs Using the Phosphorus Doping in the Active Layer Lee SK, Son WH, Lee TY, Choi SY Molecular Crystals and Liquid Crystals, 601(1), 71, 2014 |
32 |
Nanocrystalline silicon carbide thin film electrodes for lithium-ion batteries Zhang HT, Xu H Solid State Ionics, 263, 23, 2014 |
33 |
Phosphorus doped TiO2 as oxygen sensor with low operating temperature and sensing mechanism Han ZZ, Wang JJ, Liao L, Pan HB, Shen SF, Chen JZ Applied Surface Science, 273, 349, 2013 |
34 |
Highly Air-Stable Phosphorus-Doped n-Type Graphene Field-Effect Transistors Some S, Kim J, Lee K, Kulkarni A, Yoon Y, Lee S, Kim T, Lee H Advanced Materials, 24(40), 5481, 2012 |
35 |
The Effects of Phosphorus Doping in the a-Si:H and a-SiN:H on the Electrical Characteristics of a-Si:H TFT Lee SK, Ji JH, Son WH, Choi SY Molecular Crystals and Liquid Crystals, 563, 26, 2012 |
36 |
Electrochemical characteristics of phosphorus doped silicon for the anode material of lithium secondary batteries Kim JS, Choi W, Byun D, Lee JK Solid State Ionics, 212, 43, 2012 |
37 |
Low-temperature preparation of phosphorus doped mu c-Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition Yan WS, Wei DY, Guo YN, Xu S, Ong TM, Sern CC Thin Solid Films, 520(6), 1724, 2012 |
38 |
Influence of phosphorus doping and post-growth annealing on electrical and optical properties of ZnO/c-sapphire thin films grown by sputtering Liu HF, Chua SJ Journal of Crystal Growth, 324(1), 31, 2011 |
39 |
Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth Pinault-Thaury MA, Tillocher T, Kobor D, Habka N, Jomard F, Chevallier J, Barjon J Journal of Crystal Growth, 335(1), 31, 2011 |
40 |
Influence of Phosphorus Doping in the Active Layer with Deposition Time and Gas Flow Rate in a-Si:H Thin Film Transistor Kim BJ, Lee SK, Kim AR, Choi SY Molecular Crystals and Liquid Crystals, 550, 112, 2011 |