화학공학소재연구정보센터
검색결과 : 412건
No. Article
31 Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors
Jia YF, Lv HL, Song QW, Tang XY, Xiao L, Wang LY, Tang GM, Zhang YM, Zhang YM
Applied Surface Science, 397, 175, 2017
32 Control of interfacial layer growth during deposition of high-kappa oxide thin films in reactive RF-sputtering system
Rakshit A, Bose A, Biswas D, Roy M, Bhar R, Chakraborty S
Applied Surface Science, 423, 957, 2017
33 Hydrothermal fabrication of few-layer MoS2 nanosheets within nanopores on TiO2 derived from MIL-125(Ti) for efficient photocatalytic H-2 evolution
Ye F, Li HF, Yu HT, Chen S, Quan X
Applied Surface Science, 426, 177, 2017
34 Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Tapajna M, Stoklas R, Gregusova D, Gucmann F, Husekova K, Hascik S, Frohlich K, Toth L, Pecz B, Brunner F, Kuzmik J
Applied Surface Science, 426, 656, 2017
35 Assessment of structural, morphological, magnetic and gas sensing properties of CoFe2O4 thin films
Bagade AA, Ganbavle VV, Mohite SV, Dongale TD, Sinha BB, Rajpure KY
Journal of Colloid and Interface Science, 497, 181, 2017
36 내부 광전자방출 분광법을 이용한 Pt/HfO2/p-Si Metal-Insulator-Semiconductor 커패시터의 쇼트키 배리어 분석
이상연, 서형탁
Korean Journal of Materials Research, 27(1), 48, 2017
37 Single frequency correction based on three-element model for thin dielectric MOS capacitor
Zhang XZ, Zhu HC, Cheng CH, Yu T, Zhang DM, Zhang H, Li XP, Cheng Y, Xu XS, Cheng LH, Sun JS, Chen BJ
Solid-State Electronics, 129, 97, 2017
38 Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires
Larrieu G, Guerfi Y, Han XL, Clement N
Solid-State Electronics, 130, 9, 2017
39 Charge-based MOSFET model based on the Hermite interpolation polynomial
Colalongo L, Richelli A, Kovacs Z
Solid-State Electronics, 130, 70, 2017
40 On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
Acurio E, Crupi F, Magnone P, Trojman L, Meneghesso G, Iucolano F
Solid-State Electronics, 132, 49, 2017