검색결과 : 412건
No. | Article |
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31 |
Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors Jia YF, Lv HL, Song QW, Tang XY, Xiao L, Wang LY, Tang GM, Zhang YM, Zhang YM Applied Surface Science, 397, 175, 2017 |
32 |
Control of interfacial layer growth during deposition of high-kappa oxide thin films in reactive RF-sputtering system Rakshit A, Bose A, Biswas D, Roy M, Bhar R, Chakraborty S Applied Surface Science, 423, 957, 2017 |
33 |
Hydrothermal fabrication of few-layer MoS2 nanosheets within nanopores on TiO2 derived from MIL-125(Ti) for efficient photocatalytic H-2 evolution Ye F, Li HF, Yu HT, Chen S, Quan X Applied Surface Science, 426, 177, 2017 |
34 |
Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties Tapajna M, Stoklas R, Gregusova D, Gucmann F, Husekova K, Hascik S, Frohlich K, Toth L, Pecz B, Brunner F, Kuzmik J Applied Surface Science, 426, 656, 2017 |
35 |
Assessment of structural, morphological, magnetic and gas sensing properties of CoFe2O4 thin films Bagade AA, Ganbavle VV, Mohite SV, Dongale TD, Sinha BB, Rajpure KY Journal of Colloid and Interface Science, 497, 181, 2017 |
36 |
내부 광전자방출 분광법을 이용한 Pt/HfO2/p-Si Metal-Insulator-Semiconductor 커패시터의 쇼트키 배리어 분석 이상연, 서형탁 Korean Journal of Materials Research, 27(1), 48, 2017 |
37 |
Single frequency correction based on three-element model for thin dielectric MOS capacitor Zhang XZ, Zhu HC, Cheng CH, Yu T, Zhang DM, Zhang H, Li XP, Cheng Y, Xu XS, Cheng LH, Sun JS, Chen BJ Solid-State Electronics, 129, 97, 2017 |
38 |
Sub-15 nm gate-all-around field effect transistors on vertical silicon nanowires Larrieu G, Guerfi Y, Han XL, Clement N Solid-State Electronics, 130, 9, 2017 |
39 |
Charge-based MOSFET model based on the Hermite interpolation polynomial Colalongo L, Richelli A, Kovacs Z Solid-State Electronics, 130, 70, 2017 |
40 |
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT Acurio E, Crupi F, Magnone P, Trojman L, Meneghesso G, Iucolano F Solid-State Electronics, 132, 49, 2017 |