화학공학소재연구정보센터
검색결과 : 121건
No. Article
31 Modelling boron diffusion in heavily implanted low-pressure chemical vapor deposited silicon thin films during thermal post-implantation annealing
Abadli S, Mansour F
Thin Solid Films, 517(6), 1961, 2009
32 Epitaxy - A way to novel field effect devices
Sulima T, Abelein U, Eisele I
Thin Solid Films, 517(1), 365, 2008
33 Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains
Germanicus RC, Picard E, Domenges B, Danilo K, Rogel R
Applied Surface Science, 253(14), 6006, 2007
34 Thermal effects on LPCVD amorphous silicon
Lai MZ, Lee PS, Agarwal A
Thin Solid Films, 504(1-2), 145, 2006
35 Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition
Olubuyide OO, Danielson DT, Kimerling LC, Hoyt JL
Thin Solid Films, 508(1-2), 14, 2006
36 Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe
Makihara K, Xu J, Ikeda M, Murakami H, Higashi S, Miyazaki S
Thin Solid Films, 508(1-2), 186, 2006
37 Decay characteristics of electronic charged states of Si quantum dots as evaluated by an AFM/Kelvin probe technique
Nishitani J, Makihara K, Ikeda M, Murakami H, Higashi S, Miyazaki S
Thin Solid Films, 508(1-2), 190, 2006
38 Annealing and deposition effects of the chemical composition of silicon-rich nitride
Andersen KN, Svendsen WE, Stimpel-Lindner T, Sulima T, Baumgartner H
Applied Surface Science, 243(1-4), 401, 2005
39 Control of the nucleation density of Si quantum dots by remote hydrogen plasma treatment
Makihara K, Deki H, Murakami H, Higashi S, Miyazaki S
Applied Surface Science, 244(1-4), 75, 2005
40 Characterization of electrical contacts on polycrystalline 3C-SiC thin films
Castaldini A, Cavallini A, Rossi M, Cocuzza M, Ricciardi C
Materials Science Forum, 483, 745, 2005