화학공학소재연구정보센터
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No. Article
31 Synthesis and structures of heterocycle azidogallanes [(CH3)ClGaN3](4) and [(CH3)BrGaN3](3) en route to [(CH3)HGaN3](x): An inorganic precursor to GaN
Kouvetakis J, McMurran J, Steffek C, Groy TL, Hubbard JL
Inorganic Chemistry, 39(17), 3805, 2000
32 Synthesis of LiBC4N4, BC3N3, and related C-N compounds of boron: New precursors to light element ceramics
Williams D, Pleune B, Kouvetakis J, Williams MD, Andersen RA
Journal of the American Chemical Society, 122(32), 7735, 2000
33 Real-time monitoring of structure and stress evolution of boron films grown on Si(100) by ultrahigh vacuum chemical vapor deposition
Nesting DC, Kouvetakis J, Hearne S, Chason E, Tsong IST
Journal of Vacuum Science & Technology A, 17(3), 891, 1999
34 Synthesis of nanoporous cubic In(CN)(3) and In1-xGax(CN)(3) and corresponding inclusion compounds
Williams D, Kouvetakis J, O'Keeffe M
Inorganic Chemistry, 37(18), 4617, 1998
35 H2GaN3 and derivatives: A facile method to gallium nitride
McMurran J, Dai D, Balasubramanian K, Steffek C, Kouvetakis J, Hubbard JL
Inorganic Chemistry, 37(26), 6638, 1998
36 Formation of a tetrameric, cyclooctane-like, azidochlorogallane, [HClGaN3](4), and related azidogallanes. Exothermic single-source precursors to GaN nanostructures
McMurran J, Kouvetakis J, Nesting DC, Smith DJ, Hubbard JL
Journal of the American Chemical Society, 120(21), 5233, 1998
37 Novel methods for CVD of Ge4C and (Ge4C)(x)Si-y diamond-like semiconductor heterostructures : Synthetic pathways and structures of trigermyl-(GeH3)(3)CH and tetragermyl-(GeH3)(4)C methanes
Kouvetakis J, Haaland A, Shorokhov DJ, Volden HV, Girichev GV, Sokolov VI, Matsunaga P
Journal of the American Chemical Society, 120(27), 6738, 1998
38 Synthesis and Structure of a Novel Lewis Acid-Base Adduct, (H3C)(3)Sin3-Center-Dot-Gacl3, en-Route to Cl2Gan3 and Its Derivatives - Inorganic Precursors to Heteroepitaxial GaN
Kouvetakis J, Mcmurran J, Matsunaga P, Okeeffe M, Hubbard JL
Inorganic Chemistry, 36(9), 1792, 1997
39 Molecular structure of C(GeBr3)(4) determined by gas-phase electron diffraction and density functional theory calculations: Implications for the length and stability of Ge-C bonds in crystalline semiconductor solids
Haaland A, Shorokhov DJ, Strand TG, Kouvetakis J, OKeeffe M
Inorganic Chemistry, 36(23), 5198, 1997
40 Synthetic Routes to Ga(CN)(3) and Mga(CN)(4) (M=li, Cu) Framework Structures
Brousseau LC, Williams D, Kouvetakis J, Okeeffe M
Journal of the American Chemical Society, 119(27), 6292, 1997