화학공학소재연구정보센터
검색결과 : 268건
No. Article
31 Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs
Kim SK, Lee J, Geum DM, Park MS, Choi WJ, Choi SJ, Kim DH, Kim S, Kim DM
Solid-State Electronics, 122, 8, 2016
32 Performance and carrier transport analysis of In0.7Ga0.3As quantum-well MOSFETs with Al2O3/HfO2 gate stack
Son SW, Park JH, Baek JM, Kim JS, Kim DK, Shin SH, Banerjee SK, Lee JH, Kim TW, Kim DH
Solid-State Electronics, 123, 63, 2016
33 Multibias and thermal behavior of microwave GaN and GaAs based HEMTs
Alim MA, Rezazadeh AA, Gaquiere C
Solid-State Electronics, 126, 67, 2016
34 Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain
Kise N, Kinoshita H, Yukimachi A, Kanazawa T, Miyamoto Y
Solid-State Electronics, 126, 92, 2016
35 Investigation of the electrical and optical properties of InAs/InGaAs dot in a well solar cell
Lee SH, Han IS, Sohn CW, Jo HJ, Kim JS, Lee SJ, Noh SK, Kim JO
Current Applied Physics, 15(11), 1318, 2015
36 Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors
Chen XY, Gu Y, Zhang YG, Xi SP, Guo ZX, Zhou L, Li AZ, Li H
Journal of Crystal Growth, 425, 346, 2015
37 Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors
Wang CY, Zhang Y, Guan M, Cui LJ, Ding K, Zhang BT, Lin Z, Huang F, Zeng YP
Journal of Crystal Growth, 425, 381, 2015
38 A study of InGaAs/InAlAs/InP avalanche photodiode
Czuba K, Jurenczyk J, Kaniewski J
Solid-State Electronics, 104, 109, 2015
39 Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors
Liu M, Zhang YM, Lu HL, Zhang YM, Zhang JC, Ren XT
Solid-State Electronics, 109, 52, 2015
40 Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator
Kim T, Kim DH
Solid-State Electronics, 111, 218, 2015