화학공학소재연구정보센터
검색결과 : 42건
No. Article
31 Enhancement of the efficiency in color-stabilized green organic light-emitting devices utilizing a hole-blocking layer between a hole transport layer and an emission layer
Kim CU, Choo DC, Kim TW, Han SM, Kim KP, Kim JH, Seo JH, Kim YK
Molecular Crystals and Liquid Crystals, 470, 289, 2007
32 Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers
Im HC, Choo DC, Kim TW, Kim JH, Seo JH, Kim YK
Thin Solid Films, 515(12), 5099, 2007
33 High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices
Kim TW, Choo DC, No YS, Choi WK, Choi EH
Applied Surface Science, 253(4), 1917, 2006
34 Carrier transport mechanisms in organic light-emitting devices with a N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine : tris-(8-hydroxyquinoline) aluminum mixed layer acting as an emitting layer
Yoon YB, Choo DC, Lee DU, Kim TW, Kwack KD, Kim JH, Seo JH, Kim YK
Molecular Crystals and Liquid Crystals, 458, 273, 2006
35 Efficiency enhancement mechanism of organic light-emitting devices with an Alq(3) emitting layer containing a DPVBi wide bandgap doping agent
Bang HS, Choo DC, Kim TW, Kim JH, Seo JH, Kim YK
Molecular Crystals and Liquid Crystals, 459, 65, 2006
36 Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots
Lee HS, Lee JY, Kim TW, Choo DC, Kim MD, Seo SY, Shin JH
Journal of Crystal Growth, 241(1-2), 63, 2002
37 Observation of the exciton peak related to a two-dimensional electron gas in delta-modulation doped Al0.27Ga0.73As/GaAs heterostructures
Lee HG, Kang TW, Choo DC, Kim TW
Journal of Materials Science Letters, 21(14), 1109, 2002
38 Interband transition studies of one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric step quantum wells
Jung M, Kim TW, Lee DU, Choo DC, Kim HJ, Jeong JH, Kim JH, Cho JW, Yoo KH, Park YM, Kim MD, Kim DL, Seo KY
Materials Research Bulletin, 37(12), 2035, 2002
39 The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells
Jung M, Kim TW, Lee DU, Choo DC, Yoo KH, Kim DL, Kim MD, Lim H
Applied Surface Science, 177(1-2), 1, 2001
40 Dependence of the structural, the electrical, and the optical properties on the Ar/O-2 flow-rate ratios for SnO2 thin films grown on p-InP (100) substrates at low temperature
Kim TW, Lee DU, Jung M, Lee JH, Choo DC, Cho JW, Seo KY, Yoon YS
Applied Surface Science, 182(1-2), 69, 2001