31 |
Enhancement of the efficiency in color-stabilized green organic light-emitting devices utilizing a hole-blocking layer between a hole transport layer and an emission layer Kim CU, Choo DC, Kim TW, Han SM, Kim KP, Kim JH, Seo JH, Kim YK Molecular Crystals and Liquid Crystals, 470, 289, 2007 |
32 |
Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers Im HC, Choo DC, Kim TW, Kim JH, Seo JH, Kim YK Thin Solid Films, 515(12), 5099, 2007 |
33 |
High work function of Al-doped zinc-oxide thin films as transparent conductive anodes in organic light-emitting devices Kim TW, Choo DC, No YS, Choi WK, Choi EH Applied Surface Science, 253(4), 1917, 2006 |
34 |
Carrier transport mechanisms in organic light-emitting devices with a N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine : tris-(8-hydroxyquinoline) aluminum mixed layer acting as an emitting layer Yoon YB, Choo DC, Lee DU, Kim TW, Kwack KD, Kim JH, Seo JH, Kim YK Molecular Crystals and Liquid Crystals, 458, 273, 2006 |
35 |
Efficiency enhancement mechanism of organic light-emitting devices with an Alq(3) emitting layer containing a DPVBi wide bandgap doping agent Bang HS, Choo DC, Kim TW, Kim JH, Seo JH, Kim YK Molecular Crystals and Liquid Crystals, 459, 65, 2006 |
36 |
Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots Lee HS, Lee JY, Kim TW, Choo DC, Kim MD, Seo SY, Shin JH Journal of Crystal Growth, 241(1-2), 63, 2002 |
37 |
Observation of the exciton peak related to a two-dimensional electron gas in delta-modulation doped Al0.27Ga0.73As/GaAs heterostructures Lee HG, Kang TW, Choo DC, Kim TW Journal of Materials Science Letters, 21(14), 1109, 2002 |
38 |
Interband transition studies of one-side modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric step quantum wells Jung M, Kim TW, Lee DU, Choo DC, Kim HJ, Jeong JH, Kim JH, Cho JW, Yoo KH, Park YM, Kim MD, Kim DL, Seo KY Materials Research Bulletin, 37(12), 2035, 2002 |
39 |
The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells Jung M, Kim TW, Lee DU, Choo DC, Yoo KH, Kim DL, Kim MD, Lim H Applied Surface Science, 177(1-2), 1, 2001 |
40 |
Dependence of the structural, the electrical, and the optical properties on the Ar/O-2 flow-rate ratios for SnO2 thin films grown on p-InP (100) substrates at low temperature Kim TW, Lee DU, Jung M, Lee JH, Choo DC, Cho JW, Seo KY, Yoon YS Applied Surface Science, 182(1-2), 69, 2001 |