화학공학소재연구정보센터
검색결과 : 350건
No. Article
31 Interfacial Properties of Atomic Layer Deposited Al2O3/AlN Bilayer on GaN
Kim HY, Kim DH, Choi BJ
Korean Journal of Materials Research, 28(5), 268, 2018
32 Preparation of aluminum hydroxide and oxide nanostructures with controllable morphology by wet oxidation of AlN/A1 nanoparticles
Kazantsev SO, Lozhkomoev AS, Glazkova EA, Gotman I, Gutmanas EY, Lerner MI, Psakhie SG
Materials Research Bulletin, 104, 97, 2018
33 Densification and characterization of SiC-AlN composites for solar energy applications
Besisa DHA, Ewais EMM, Ahmed YMZ, Elhosiny FI, Kuznetsov DV, Fend T
Renewable Energy, 129, 201, 2018
34 Impact of sputter deposition parameters on the microstructural and piezoelectric properties of CrxAl1 (-) N-x thin films
Wistrela E, Schmied I, Schneider M, Gillinger M, Mayrhofer PM, Bittner A, Schmid U
Thin Solid Films, 648, 76, 2018
35 Deposition of AlN films for acoustic biosensors by deep oscillation magnetron sputtering: effect of bias voltage
Melo-Maximo L, Lin J, Murillo AE, Salas O, Oliva-Ramirez J, Oseguera J, Garcia-Farrera B, Melo-Maximo D
Thin Solid Films, 664, 83, 2018
36 Influence of metallic surface states on electron affinity of epitaxial AlN films
Mishra M, Krishna S, Aggarwal N, Gupta G
Applied Surface Science, 407, 255, 2017
37 Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer
Huang J, Niu MT, Zhang JC, Wang W, Wang JF, Xu K
Journal of Crystal Growth, 459, 159, 2017
38 High-quality AlN template grown on a patterned Si(111) substrate
Tran BT, Hirayama H, Jo M, Maeda N, Inoue D, Kikitsu T
Journal of Crystal Growth, 468, 225, 2017
39 AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range
Tamariz S, Martin D, Grandjean N
Journal of Crystal Growth, 476, 58, 2017
40 A kinetics model for MOCVD deposition of AlN film based on Grove theory
Pu KW, Dai XY, Miao DM, Wu SJ, Zhao TL, Hao Y
Journal of Crystal Growth, 478, 42, 2017