화학공학소재연구정보센터
검색결과 : 475건
No. Article
21 Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience
Dong CY, Xu JN, Zhou Y, Zhang Y, Xie HT
Solid-State Electronics, 153, 74, 2019
22 Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
Lee BH, Lee DY, Lee JY, Park S, Kim S, Lee SY
Solid-State Electronics, 158, 59, 2019
23 Origin of the dry etch damage in the short-channel oxide thin-film transistors for high resolution display application
Choi JH, Yang JH, Pi JE, Hwang CY, Kim HO, Hwang CS
Thin Solid Films, 674, 71, 2019
24 Solution-processed organic-inorganic hybrid gate insulator for complementary thin film transistor logic circuits
Cho HJ, Lee DH, Park EK, Kim MS, Lee SY, Park K, Choe H, Jeon JH, Kim YS
Thin Solid Films, 673, 14, 2019
25 Scalable fabrication of flexible multi-level nanoimprinting molds with uniform heights via a 'top-to-bottom' level patterning sequence
Choi S, Kook Y, Kim C, Yoo S, Park KS, Lee J, Park C, Ok JG, Kang S
Applied Surface Science, 428, 895, 2018
26 Inkjet-printed p-type nickel oxide thin-film transistor
Hu HL, Zhu JG, Chen MS, Guo TL, Li FS
Applied Surface Science, 441, 295, 2018
27 Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications
Hung CC, Lin YJ
Chemical Physics Letters, 691, 141, 2018
28 High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation
Kang MS, Cho WJ
Current Applied Physics, 18(9), 1080, 2018
29 High-performance amorphous indium gallium zinc oxide thin-film transistors with sol-gel processed gate dielectric and channel layer fabricated using microwave irradiation
Kang MS, Cho WJ
Current Applied Physics, 18(9), 1080, 2018
30 Correlation between spin density and V-th instability of IGZO thin-film transistors
Park JH, Lee S, Lee HS, Kim SK, Park KS, Yoon SY
Current Applied Physics, 18(11), 1447, 2018