화학공학소재연구정보센터
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No. Article
21 Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique
Sekiguchi H, Date K, Imanishi T, Tateishi H, Yamane K, Okada H, Kishino K, Wakahara A
Journal of Crystal Growth, 511, 73, 2019
22 An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(111) substrate
Akiyama T, Tsuboi Y, Nakamura K, Ito T
Journal of Crystal Growth, 511, 89, 2019
23 Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si
Lange AP, Mahajan S
Journal of Crystal Growth, 511, 106, 2019
24 Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing
Uesugi K, Hayashi Y, Shojiki K, Xiao SY, Nagamatsu K, Yoshida H, Miyake H
Journal of Crystal Growth, 510, 13, 2019
25 Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD
Fujikawa S, Ishiguro T, Wang K, Terashima W, Fujishiro H, Hirayama H
Journal of Crystal Growth, 510, 47, 2019
26 Growth of self-assembled and position-controlled InN nanowires on Si (111) by molecular beam epitaxy
Weiszer S, Zeidler A, de la Mata M, Stutzmann M
Journal of Crystal Growth, 510, 56, 2019
27 Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy
Ramesh C, Tyagi P, Abhiram G, Gupta G, Kumar MS, Kushvaha SS
Journal of Crystal Growth, 509, 23, 2019
28 Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool
Tsukui M, Iyechika Y, Nago H, Takahashi H
Journal of Crystal Growth, 509, 103, 2019
29 High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy
Noh YK, Lee ST, Kim MD, Oh JE
Journal of Crystal Growth, 509, 141, 2019
30 Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal
Alreesh MA, Von Dollen P, Malkowski TF, Mates T, Albrithen H, DenBaars S, Nakamura S, Speck JS
Journal of Crystal Growth, 508, 50, 2019