21 |
Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique Sekiguchi H, Date K, Imanishi T, Tateishi H, Yamane K, Okada H, Kishino K, Wakahara A Journal of Crystal Growth, 511, 73, 2019 |
22 |
An ab initio study for the formation of two-dimensional III-nitride compound ultrathin films: Effects of Ag(111) substrate Akiyama T, Tsuboi Y, Nakamura K, Ito T Journal of Crystal Growth, 511, 89, 2019 |
23 |
Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si Lange AP, Mahajan S Journal of Crystal Growth, 511, 106, 2019 |
24 |
Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing Uesugi K, Hayashi Y, Shojiki K, Xiao SY, Nagamatsu K, Yoshida H, Miyake H Journal of Crystal Growth, 510, 13, 2019 |
25 |
Evaluation of GaN/AlGaN THz quantum-cascade laser epi-layers grown on AlGaN/Si templates by MOCVD Fujikawa S, Ishiguro T, Wang K, Terashima W, Fujishiro H, Hirayama H Journal of Crystal Growth, 510, 47, 2019 |
26 |
Growth of self-assembled and position-controlled InN nanowires on Si (111) by molecular beam epitaxy Weiszer S, Zeidler A, de la Mata M, Stutzmann M Journal of Crystal Growth, 510, 56, 2019 |
27 |
Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy Ramesh C, Tyagi P, Abhiram G, Gupta G, Kumar MS, Kushvaha SS Journal of Crystal Growth, 509, 23, 2019 |
28 |
Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool Tsukui M, Iyechika Y, Nago H, Takahashi H Journal of Crystal Growth, 509, 103, 2019 |
29 |
High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy Noh YK, Lee ST, Kim MD, Oh JE Journal of Crystal Growth, 509, 141, 2019 |
30 |
Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal Alreesh MA, Von Dollen P, Malkowski TF, Mates T, Albrithen H, DenBaars S, Nakamura S, Speck JS Journal of Crystal Growth, 508, 50, 2019 |