화학공학소재연구정보센터
검색결과 : 87건
No. Article
21 Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition
Conde A, Martinez C, Jimenez D, Miranda E, Rafi JM, Campabadal F, Sune J
Solid-State Electronics, 71, 48, 2012
22 Direct observation of crystallization of HfO2 promoted on silicon surfaces in gate dielectric stacks
Kim S, Oshima Y, Nakajima N, Hashikawa N, Asayama K, Takayanagi K
Thin Solid Films, 520(7), 2562, 2012
23 Experimental study of mobility degradation in ultrathin high-kappa based MOSFETs
Atarah SA
Solid-State Electronics, 55(1), 44, 2011
24 Ni-Al-O diffusion barrier layer for high-kappa metal-oxide-semiconductor capacitor
Wu DQ, Jia R, Yao JC, Zhao HS, Chang AM
Thin Solid Films, 519(10), 3358, 2011
25 Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics
Pan TM, Yen LC
Applied Surface Science, 256(6), 1845, 2010
26 Band alignments at SrZrO3/Ge(001) interface: Thermal annealing effects
Yang M, Deng WS, Chen Q, Feng YP, Wong LM, Chai JW, Pan JS, Wang SJ, Ng CM
Applied Surface Science, 256(15), 4850, 2010
27 Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy
He G, Toyoda S, Shimogaki Y, Oshima M
Applied Surface Science, 257(5), 1638, 2010
28 Si versus Ge for future microelectronics
Claeys C, Mitard J, Eneman G, Meuris M, Simon E
Thin Solid Films, 518(9), 2301, 2010
29 Structural and electrical properties of thin Ho2O3 gate dielectrics
Pan TM, Chang WT, Chiu FC
Thin Solid Films, 519(2), 923, 2010
30 Characterization of gadolinium oxide film by pulse laser deposition
Cheng XH, Xu DP, Song ZR, He DW, Yu YH, Zhao QT, Shen DS
Applied Surface Science, 256(3), 921, 2009