21 |
Substrate influence on preferential orientation of Bi2Te3 layers grown by physical vapor transport using elemental Bi and Te sources Diaz OC, Pereira OD, Echavarria AE Materials Chemistry and Physics, 198, 341, 2017 |
22 |
Electronic structure and topological features of tin-based binary nanosheets and their hydrogenated/fluorinated derivatives: A first-principles study Wang YL, Ding Y Applied Surface Science, 382, 1, 2016 |
23 |
Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE Patel SJ, Logan JA, Harrington SD, Schultz BD, Palmstrom CJ Journal of Crystal Growth, 436, 145, 2016 |
24 |
Selective area growth of Bi2Te3 and Sb2Te3 topological insulator thin films Kampmeier J, Weyrich C, Lanius M, Schall M, Neumann E, Mussler G, Schapers T, Grutzmacher D Journal of Crystal Growth, 443, 38, 2016 |
25 |
Hybrid physical-chemical vapor deposition of Bi2Se3 films Brom JE, Weiss L, Choudhury TH, Redwing JM Journal of Crystal Growth, 452, 230, 2016 |
26 |
Topography and structure of ultrathin topological insulator Sb2Te3 films on Si(111) grown by means of molecular beam epitaxy Lanius M, Kampmeier J, Kolling S, Mussler G, Koenraad PM, Grutzmacher D Journal of Crystal Growth, 453, 158, 2016 |
27 |
Electrical transport properties and morphology of topological insulator Bi2Se3 thin films with different thickness prepared by magnetron sputtering Zhang M, Wei ZT, Jin R, Ji YX, Yan Y, Pu XY, Yang XS, Zhao Y Thin Solid Films, 603, 289, 2016 |
28 |
High-quality ultra-flat BiSbTe3 films grown by MBE Liu W, Endicott L, Stoica VA, Chi H, Clarke R, Uher C Journal of Crystal Growth, 410, 23, 2015 |
29 |
Quintuple layer Bi2Se3 thin films directly grown on insulating SiO2 using molecular beam epitaxy Jeon JH, Song M, Kim H, Jang WJ, Park JY, Yoon S, Kahng SJ Applied Surface Science, 316, 42, 2014 |
30 |
Photoresponse properties of ultrathin Bi2Se3 nanosheets synthesized by hydrothermal intercalation and exfoliation route Zang C, Qi X, Ren L, Hao GL, Liu YD, Li J, Zhong JX Applied Surface Science, 316, 341, 2014 |