화학공학소재연구정보센터
검색결과 : 27건
No. Article
21 Determination of band offsets in strained-Si heterolayers
Maiti C, Samanta SK, Chatterjee S, Dalapati GK, Bhattacharya S, Armstrong BM, Gamble HS, McCarthy J, Perova TS, Moore RA
Thin Solid Films, 462-63, 80, 2004
22 Studies of 6H-SiC devices
Wang SR, Liu ZL
Current Applied Physics, 2(5), 393, 2002
23 Characteristics of mobile ions in the SiO2 films of SiC-MOS structures
Jang SJ, Song HJ, Oh KY, Lee KH, Lim YJ, Cho NI
Materials Science Forum, 389-3, 1017, 2002
24 A large reduction in interface-state density for MOS capacitor on 4H-SiC (11(2)over-bar0) face using H-2 and H2O vapor atmosphere post-oxidation annealing
Fukuda K, Senzaki J, Kushibe M, Kojima K, Kosugi R, Suzuki S, Harada S, Suzuki T, Tanaka T, Arai K
Materials Science Forum, 389-3, 1057, 2002
25 Traps at the interface of 3C-SiC/SiO2-MOS-structures
Ciobanu F, Pensl G, Nagasawa H, Schoner A, Dimitrijev S, Cheong KY, Afanas'ev VV, Wagner G
Materials Science Forum, 433-4, 551, 2002
26 Influence of the post-oxidation process on the MOS interface and MOSFETs properties
Suzuki S, Cho WJ, Kosugi R, Senzaki J, Harada S, Fukuda K
Materials Science Forum, 353-356, 643, 2001
27 Experimental study of the current characteristics of thin silicon oxide films under dynamic stress
Zahlmann-Nowitzki JW, Nebrich L, Seegebrecht P
Solid-State Electronics, 45(8), 1309, 2001