화학공학소재연구정보센터
검색결과 : 268건
No. Article
21 DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
Deshpande V, Djara V, O'Connor E, Hashemi P, Balakrishnan K, Caimi D, Sousa M, Czornomaz L, Fompeyrine J
Solid-State Electronics, 128, 87, 2017
22 3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters
Alim MA, Rezazadeh AA
Solid-State Electronics, 132, 24, 2017
23 Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer
Eun HR, Yoon YJ, Seo JH, Cho MS, Lee JH, Kwon HI, Kang IM
Current Applied Physics, 16(7), 681, 2016
24 Study towards integration of In0.53Ga0.47As on 300 mm Si for CMOS sub-7 nm node: Development of thin graded InxGa1-xAs buffers on GaAs
Mols Y, Kunert B, Gaudin G, Langer R, Caymax M
Journal of Crystal Growth, 452, 244, 2016
25 Interface analysis on MOVPE grown InP-GaInAs-InP double heterostructures for application in infrared solar cells
Dobrich A, Schwarzburg K, Hannappel T
Solar Energy Materials and Solar Cells, 148, 25, 2016
26 Demonstration of the operation principles of intermediate band solar cells at room temperature
Lopez E, Datas A, Ramiro I, Linares PG, Antolin E, Artacho I, Marti A, Luque A, Shoji Y, Sogabe T, Ogura A, Okada Y
Solar Energy Materials and Solar Cells, 149, 15, 2016
27 Replacement fin processing for III-V on Si: From FinFets to nanowires
Waldron N, Merckling C, Teugels L, Ong P, Sebaai F, Barla K, Collaert N, Thean VY
Solid-State Electronics, 115, 81, 2016
28 Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials
Krivec S, Poljak M, Suligoj T
Solid-State Electronics, 115, 109, 2016
29 High-performance logic transistor DC benchmarking toward 7 nm technology-node between III-V and Si tri-gate n-MOSFETs using virtual-source injection velocity model
Baek RH, Kim JS, Kim DK, Kim T, Kim DH
Solid-State Electronics, 116, 100, 2016
30 Instability investigation of In0.7Ga0.3As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2
Kwon HM, Kim DK, Lim SK, Hwang HC, Son SW, Park JH, Park WS, Kim JS, Shin CS, Park WK, Lee JH, Kim T, Kim DH
Solid-State Electronics, 121, 16, 2016