화학공학소재연구정보센터
검색결과 : 32건
No. Article
21 Impurity-controlled dopant activation - The role of hydrogen in p-type doping of SiC
Aradi B, Gali A, Deak P, Son NT, Janzen E
Materials Science Forum, 389-3, 561, 2002
22 Experiment and theory of the anharmonic effect in C-H and C-D vibrations of SiC
Choyke WJ, Devaty RP, Bai S, Gali A, Deak P, Pensl G
Materials Science Forum, 389-3, 585, 2002
23 Theoretical study of antisite aggregation in alpha-SiC
Rauls E, Gali A, Deak P, Frauenheim T
Materials Science Forum, 433-4, 491, 2002
24 Calculation of hyperfine constants of defects in 4H-SiC
Gali A, Deak P, Son NT, Janzen E, von Bardeleben HJ, Monge JL
Materials Science Forum, 433-4, 511, 2002
25 A shallow acceptor complex in 4H-SiC: AlSiNCAlSi
Deak P, Aradi B, Gali A, Gerstmann U, Choyke WJ
Materials Science Forum, 433-4, 523, 2002
26 A cause for SiC/SiO2 interface states: The site selection of oxygen in SiC
Deak P, Gali A, Hajnal Z, Frauenheim T, Son NT, Janzen E, Choyke WJ, Ordejon P
Materials Science Forum, 433-4, 535, 2002
27 Theory of hydrogen in silicon carbide
Deak P, Gali A, Aradi B
Materials Science Forum, 353-356, 421, 2001
28 Intrinsic defect complexes in alpha-SiC: the formation of antisite Pairs
Rauls E, Hajnal Z, Gali A, Deak P, Frauenheim T
Materials Science Forum, 353-356, 435, 2001
29 Boron centers in 4H-SiC
Aradi B, Gali A, Deak P, Rauls E, Frauenheim T, Son NT
Materials Science Forum, 353-356, 455, 2001
30 Electrical activity of isolated oxygen defects in SiC
Gali A, Heringer D, Hajnal Z, Frauenheim T, Choyke WJ
Materials Science Forum, 353-356, 463, 2001