화학공학소재연구정보센터
검색결과 : 31건
No. Article
21 Time-Resolved Dislocation-Related Luminescence in Strain-Relaxed SiGe/Si
Fukatsu S, Mera Y, Inoue M, Maeda K
Thin Solid Films, 294(1-2), 33, 1997
22 Highly Oriented Si Nanoparticles in SiO2 Created by Si Molecular-Beam Epitaxy with Oxygen Implantation
Ishikawa Y, Shibata N, Fukatsu S
Thin Solid Films, 294(1-2), 227, 1997
23 Dynamical Behavior in a Shallow Quantum Confinement System
Fukatsu S
Thin Solid Films, 294(1-2), 318, 1997
24 Anomalous Photoluminescence of Pure-Ge/Si Type-II Coupled Quantum-Wells (II-Cqws)
Sunamura H, Usami N, Shiraki Y, Fukatsu S
Thin Solid Films, 294(1-2), 336, 1997
25 Improved Luminescence Quality with an Asymmetric Confinement Potential in Si-Based Type-II Quantum-Wells Grown on a Graded SiGe Relaxed Buffer
Fukatsu S, Usami N, Shiraki Y
Journal of Vacuum Science & Technology B, 14(3), 2387, 1996
26 Conversion of Native Lignin to a Highly Phenolic Functional Polymer and Its Separation from Lignocellulosics
Funaoka M, Matsubara M, Seki N, Fukatsu S
Biotechnology and Bioengineering, 46(6), 545, 1995
27 Postgrowth of a Si Contact Layer on an Air-Exposed Si1-Xgexsi Single-Quantum-Well Grown by Gas-Source Molecular-Beam Epitaxy, for Use in an Electroluminescent Device
Kato Y, Fukatsu S, Shiraki Y
Journal of Vacuum Science & Technology B, 13(1), 111, 1995
28 Growth of Vertical-Cavity on Buried-Oxide Substrate by Gas-Source Si Molecular-Beam Epitaxy and Coupled-Mode Luminescence of Strained Si1-xGex/Si Quantum-Wells
Fukatsu S, Nayak DK, Shiraki Y
Journal of Vacuum Science & Technology B, 13(2), 724, 1995
29 Quantum-Confined Stark Shift Observed by Electroluminescence and Circular-Polarized Luminescence Excitation Spectroscopy in GaAs/AlGaAs Coupled Quantum-Wells
Kato Y, Takahashi Y, Fukatsu S, Shiraki Y, Ito R
Journal of Vacuum Science & Technology B, 12(2), 1053, 1994
30 Time-of-Flight Measurement of Carrier Transport and Carrier Collection in Strained Si1-xGex/Si Quantum-Wells
Fukatsu S, Fujiwara A, Muraki K, Takahashi Y, Shiraki Y
Journal of Vacuum Science & Technology B, 12(2), 1156, 1994