화학공학소재연구정보센터
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No. Article
21 Solution-processed high-k thin films as a resistive switching for ReRAM applications
Jang KH, Oh SM, An HM, Cho WJ
Current Applied Physics, 14(3), 462, 2014
22 Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate
Lee BS, Kim BY, Lee JH, Yoo JH, Hong K, Nahm S
Current Applied Physics, 14(12), 1825, 2014
23 Electronic conductivity in the SiO2-PbO-Fe2O3 glass containing magnetic nanostructures
Barczynski BJ, Szreder NA, Karczewski J, Gazda M
Solid State Ionics, 262, 801, 2014
24 Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio
Zhong L, Reed PA, Huang R, de Groot CH, Jiang L
Solid-State Electronics, 94, 98, 2014
25 Charge carrier transport in liquid crystals
Hanna J, Ohno A, Iino H
Thin Solid Films, 554, 58, 2014
26 Metal and annealing atmospheres dependence of resistive switching in metal/Nb-0.7wt%-SrTiO3 interfaces
Zhong S, Cui YM
Current Applied Physics, 13(5), 913, 2013
27 Hydronium dynamics in the perchloric acid clathrate hydrate
Desmedt A, Lechner RE, Lassegues JC, Guillaume F, Cavagnat D, Grondin J
Solid State Ionics, 252, 19, 2013
28 Temperature-dependent current conduction of metal-ferroelectric (BiFeO3)-insulator (ZrO2)-Silicon capacitors for nonvolatile memory applications
Juan PC, Lin CL, Liu CH, Chen CH, Chang YK, Yeh LY
Thin Solid Films, 539, 360, 2013
29 Current-voltage characteristics of nanostructured SnO2 films
Giberti A, Malagu C
Thin Solid Films, 548, 683, 2013
30 Electrical bistability of tris-(8-hydroxyquinoline) aluminum (Alq(3))/ZnSe organic-inorganic bistable device
Onlaor K, Tunhoo B, Thiwawong T, Nukeaw J
Current Applied Physics, 12(1), 331, 2012