21 |
Formation of high conductivity WSix layer and its characterization as a gate electrode Byun JS, Lee BH, Park JS, Sohn DK, Choi SJ, Kim JJ Journal of the Electrochemical Society, 145(9), 3228, 1998 |
22 |
Dopant effects on lateral silicide growth in self-aligned titanium silicide process Park JS, Byun JS, Sohn DK, Lee BH, Park JW, Kim JJ Journal of the Electrochemical Society, 145(10), 3585, 1998 |
23 |
Selective titanium silicide deposition using SiH4-TiCl4-H-2 low-pressure chemical vapor deposition and film characterization Byun JS, Choi SJ, Kim JJ, Choi JT, Swenberg J, Achutharaman R Journal of the Electrochemical Society, 145(11), 3941, 1998 |
24 |
Effect of Deposition Temperature and Sputtering Ambient on in-Situ Cobalt Silicide Formation Byun JS, Park JS, Kim JJ Journal of the Electrochemical Society, 144(9), 3175, 1997 |
25 |
Characterization of the Dopant Effect on Dichlorosilane-Based Tungsten Silicide Deposition Byun JS, Lee BH, Park JS, Kim JJ Journal of the Electrochemical Society, 144(10), 3572, 1997 |
26 |
The effects of screen oxide and low temperature BPSG anneal on titanium salicide formation Lee KN, Ahn JG, Hwang H, Byun JS, Lee YJ Thin Solid Films, 308-309, 585, 1997 |
27 |
Defect Generation During Epitaxial CoSi2 Formation Using Co/Ti Bilayer on Oxide Patterned (100)Si Substrate and Its Effect on the Electrical-Properties Byun JS, Seon JM, Youn KS, Hwang HS, Park JW, Kim JJ Journal of the Electrochemical Society, 143(3), L56, 1996 |
28 |
Epitaxial C49-TiSi2 Formation on (100)Si Substrate Using TiNx and Its Electrical Characteristics as a Shallow Contact Metallization Byun JS Journal of the Electrochemical Society, 143(6), 1984, 1996 |
29 |
복사 열전달이 있는 반투명 경사 다공질층에서의 유체 안정성 박흥목, 변재식, 유기풍, 이건홍 HWAHAK KONGHAK, 33(3), 376, 1995 |
30 |
Layer Reversal of Co/Zr Bilayer and Epitaxial-Growth of CoSi2 Layer on Si(001) Substrate Byun JS, Kim JJ, Kim WS, Kim HJ Journal of the Electrochemical Society, 142(8), 2805, 1995 |