화학공학소재연구정보센터
검색결과 : 268건
No. Article
261 A Photoluminescence and X-Ray-Diffraction Analysis of InAlAs/InP Heterostructures Grown by Molecular-Beam Epitaxy
Yoon SF, Miao YB, Radhakrishnan K, Swaminathan S
Thin Solid Films, 266(2), 302, 1995
262 Islands and Critical Thickness of InAs Grown by MBE on Nominallyoriented and Misoriented GaAs Substrates
Sasaki A
Thin Solid Films, 267(1-2), 24, 1995
263 Optimal Surface Cleaning of GaAs (001) with Atomic-Hydrogen
Petit EJ, Houzay F
Journal of Vacuum Science & Technology B, 12(2), 547, 1994
264 Modulated Arsenic Molecular-Beam Epitaxial-Growth of In0.48Al0.52As
Chou ST, Cheng KY
Journal of Vacuum Science & Technology B, 12(2), 1016, 1994
265 High-Quality Strained Quantum Wires Grown by Molecular-Beam Epitaxy on (100) GaAs Substrate
Chen YP, Reed JD, Schaff WJ, Eastman LF
Journal of Vacuum Science & Technology B, 12(2), 1280, 1994
266 Molecular-Beam Epitaxy of InAs and Its Interaction with a GaAs Overlayer on Vicinal GaAs (001) Substrates
Lin XW, Lilientalweber Z, Washburn J, Weber ER, Sasaki A, Wakahara A, Nabetani Y
Journal of Vacuum Science & Technology B, 12(4), 2562, 1994
267 Mechanisms of Strained Island Formation in Molecular-Beam Epitaxy of InAs on GaAs(100)
Chen P, Xie Q, Madhukar A, Chen L, Konkar A
Journal of Vacuum Science & Technology B, 12(4), 2568, 1994
268 Multilayer Resist Process for Asymmetric Gate Recess in Field-Effect Transistors
Ballegeer DG, Nummila K, Adesida I
Journal of Vacuum Science & Technology B, 11(6), 2560, 1993