화학공학소재연구정보센터
검색결과 : 269건
No. Article
231 Light and heavy hole excitons in absorption and magnetoabsorption spectra of InGaAs/GaAs MQWs
Moumanis K, Seisyan RP, Kokhanovskii SI, Sasin ME
Thin Solid Films, 364(1-2), 249, 2000
232 Ordering of InxGa1-xAs quantum dots self-organized on GaAs(311)B substrates
Lan S, Akahane K, Song HZ, Okada Y, Kawabe M
Journal of Vacuum Science & Technology B, 17(3), 1105, 1999
233 A comparative study of carbon incorporation in heavily doped GaAs and Al0.3Ga0.7As grown by solid-source molecular beam epitaxy using carbon tetrabromide
Lubyshev D, Micovic M, Gratteau N, Cai WZ, Miller DL, Ray O, Streater RW, SpringThorpe AJ
Journal of Vacuum Science & Technology B, 17(3), 1180, 1999
234 Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition
Flebbe O, Eisele H, Kalka T, Heinrichsdorff F, Krost A, Bimberg D, Dahne-Prietsch M
Journal of Vacuum Science & Technology B, 17(4), 1639, 1999
235 Control of wet-etching thickness in the vertical cavity surface emitting laser structure by in situ laser reflectometry
Cho HK, Lee JY, Lee B, Baek JH, Han WS
Journal of Vacuum Science & Technology B, 17(6), 2626, 1999
236 Self-organized quantum dots and quantum dot lasers (invited)
Ishikawa H, Shoji H, Nakata Y, Mukai K, Sugawara M, Egawa M, Otsuka N, Sugiyama Y, Futatsugi T, Yokoyama N
Journal of Vacuum Science & Technology A, 16(2), 794, 1998
237 Band alignment and barrier height considerations for the quantum-confined Stark effect
Yip RYF, Desjardins P, Isnard L, Ait-Ouali A, Bensaada A, Marchand H, Brebner JL, Currie JF, Masut RA
Journal of Vacuum Science & Technology A, 16(2), 801, 1998
238 Thermal stability of Pd/Zn and Pt based contacts to p-In0.53Ga0.47As/InP with various barrier layers
Leech PW, Reeves GK, Zhou W, Ressel P
Journal of Vacuum Science & Technology B, 16(1), 227, 1998
239 Molecular beam epitaxial growth of InAs on a (311)A corrugated surface : Growth mechanism and morphology
Lubyshev DI, Micovic M, Miller D, Chizhov I, Willis RF
Journal of Vacuum Science & Technology B, 16(3), 1339, 1998
240 Iodine and carbon tetrabromide use in solid source molecular beam epitaxy
Miller DL, Micovic M, Lubyshev DI, Cai WZ, Hwang WY, Zhang K
Journal of Vacuum Science & Technology B, 16(3), 1361, 1998