화학공학소재연구정보센터
검색결과 : 87건
No. Article
11 Enhancement of electrical characteristics and reliability in crystallized ZrO2 gate dielectrics treated with in-situ atomic layer doping of nitrogen
Huang JJ, Huang LT, Tsai MC, Lee MH, Chen MJ
Applied Surface Science, 305, 214, 2014
12 Diels-Alder Crosslinked Block-Copolymer Gate Dielectrics for Low Voltage Operated Top-Gate Organic Field-Effect Transistors
Kang SJ, Baeg KJ, Choi WS, Noh YY
Molecular Crystals and Liquid Crystals, 598(1), 69, 2014
13 Insulating characteristics of polyvinyl alcohol for integrated electronics
Van Etten EA, Ximenes ES, Tarasconi LT, Garcia ITS, Forte MMC, Boudinov H
Thin Solid Films, 568, 111, 2014
14 Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure
Kawanago T, Kakushima K, Ahmet P, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H
Solid-State Electronics, 84, 53, 2013
15 Synthesis and electrical characterization of low-temperature thermal-cured epoxy resin/functionalized silica hybrid-thin films for application as gate dielectrics
Na M, Kang YT, Kim SC, Kim ED
Thin Solid Films, 539, 274, 2013
16 Improved interface properties and reliability for Hf-In-Zn-O semiconductor capacitors with an electric-double-layer gate dielectric by inserting a HfO2 interlayer
Zou X, Fang GJ, Qin PL, Wang HJ, Song ZC, Wang HN, Long H, Wan Q
Thin Solid Films, 540, 261, 2013
17 Bias-Stress-Induced Charge Trapping at Polymer Chain Ends of Polymer Gate-Dielectrics in Organic Transistors
Choi HH, Lee WH, Cho K
Advanced Functional Materials, 22(22), 4833, 2012
18 Solution Processable Low-Voltage Organic Thin Film Transistors with High-k Relaxor Ferroelectric Polymer as Gate Insulator
Li JH, Sun ZH, Yan F
Advanced Materials, 24(1), 88, 2012
19 Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors
Park SY, Kim BJ, Kim K, Kang MS, Lim KH, Il Lee T, Myoung JM, Baik HK, Cho JH, Kim YS
Advanced Materials, 24(6), 834, 2012
20 Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
Kawanago T, Suzuki T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H
Solid-State Electronics, 68, 68, 2012