화학공학소재연구정보센터
검색결과 : 15건
No. Article
11 Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
Kakushima K, Okamoto K, Adachi M, Tachi K, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H
Solid-State Electronics, 52(9), 1280, 2008
12 Distributions of barrier heights, difference of effective contact potential, and local values of flat-band voltage in Al-SiO2-Si and poly-Si-SiO2-Si structures
Przewlocki HM, Kudia A, Piskorski K, Brzezinska D
Thin Solid Films, 516(12), 4184, 2008
13 Parameter extraction using novel phenomena in nano-MOSFETs with ultra-thin (EOT=0.46-1.93 nm) high-K gate dielectrics
Kar S
Thin Solid Films, 504(1-2), 178, 2006
14 Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC
Yang BL, Lin LM, Lo HB, Lai PT
Solid-State Electronics, 49(7), 1223, 2005
15 Inductively coupled plasma application to the resist ashing
Takagi K, Ikeda A, Fujimura T, Kuroki Y
Thin Solid Films, 386(2), 160, 2001