검색결과 : 19건
| No. | Article |
|---|---|
| 11 |
Preparation of semi-insulating silicon carbide by vanadium doping during PVT bulk crystal growth Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Winnacker A Materials Science Forum, 433-4, 51, 2002 |
| 12 |
Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC Weingartner R, Bickermann M, Herro Z, Kunecke U, Sakwe SA, Wellmann PJ, Winnacker A Materials Science Forum, 433-4, 333, 2002 |
| 13 |
Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals Bickermann M, Weingartner R, Herro Z, Hofmann D, Kunecke U, Wellmann PJ, Winnacker A Materials Science Forum, 433-4, 337, 2002 |
| 14 |
Determination of exciton capture cross-sections of neutral nitrogen donor on cubic and hexagonal sites in n-type (N) 6H-SiC Weingartner R, Albrecht A, Wellmann PJ, Winnacker A Materials Science Forum, 433-4, 341, 2002 |
| 15 |
On the preparation of semi-insulating SiC bulk crystals by the PVT technique Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Wellmann PJ, Winnacker A Applied Surface Science, 184(1-4), 84, 2001 |
| 16 |
Incorporation of boron and vanadium during PVT growth of 6H-SiC crystals Bickermann M, Epelbaum BM, Hofmann D, Straubinger TL, Weingartner R, Winnacker A Journal of Crystal Growth, 233(1-2), 211, 2001 |
| 17 |
Stability criteria for 4H-SiC bulk growth Straubinger TL, Bickermann M, Hofmann D, Weingartner R, Wellmann PJ, Winnacker A Materials Science Forum, 353-356, 25, 2001 |
| 18 |
Study of boron incorporation during PVT growth of p-type SiC crystals Bickermann M, Hofmann D, Rasp M, Straubinger TL, Weingartner R, Wellmann PJ, Winnacker A Materials Science Forum, 353-356, 49, 2001 |
| 19 |
Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC Weingartner R, Bickermann M, Hofmann D, Rasp M, Straubinger TL, Wellmann PJ, Winnacker A Materials Science Forum, 353-356, 397, 2001 |