검색결과 : 20건
| No. | Article |
|---|---|
| 11 |
The development of 2in 6H-SiC wafer with high thermal-conductivity Miyanagi Y, Nakayama K, Shiomi H, Nishino S Materials Science Forum, 389-3, 51, 2002 |
| 12 |
The development of 4H-SiC {03(3)over-bar8) wafers Nakayama K, Miyanagi Y, Shiomi H, Nishino S, Kimoto T, Matsunami H Materials Science Forum, 389-3, 123, 2002 |
| 13 |
The effect of epitaxial growth on warp of SiC wafers Nakayama K, Miyanagi Y, Maruyama K, Okamoto Y, Shiomi H, Nishino S Materials Science Forum, 389-3, 235, 2002 |
| 14 |
Stress distribution in 2in SiC wafer measured by photoelastic method Sasaki M, Miyanagi Y, Nakayama K, Shiomi H, Nishino S Materials Science Forum, 389-3, 403, 2002 |
| 15 |
Characterization of 2in SiC as-grown bulk by SWBXT at SPring-8 Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S Materials Science Forum, 389-3, 407, 2002 |
| 16 |
Observation of 2in SiC wafer by SWBXT at SPring-8 Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S Materials Science Forum, 389-3, 411, 2002 |
| 17 |
4H-SiC MOSFETs on (03(3)over-bar8) face Hirao T, Yano H, Kimoto T, Matsunami H, Shiomi H Materials Science Forum, 389-3, 1065, 2002 |
| 18 |
Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes Kimoto T, Danno K, Fujihira K, Shiomi H, Matsunami H Materials Science Forum, 433-4, 197, 2002 |
| 19 |
Characterization of 2 inch SiC wafers made by the sublimation method Sasaki M, Shiomi H, Nishino S Materials Science Forum, 353-356, 267, 2001 |
| 20 |
Polytype and defect control of two inch diameter bulk SiC Sasaki M, Shiomi H, Harima H, Nishino S Materials Science Forum, 338-3, 485, 2000 |