화학공학소재연구정보센터
검색결과 : 20건
No. Article
11 The development of 2in 6H-SiC wafer with high thermal-conductivity
Miyanagi Y, Nakayama K, Shiomi H, Nishino S
Materials Science Forum, 389-3, 51, 2002
12 The development of 4H-SiC {03(3)over-bar8) wafers
Nakayama K, Miyanagi Y, Shiomi H, Nishino S, Kimoto T, Matsunami H
Materials Science Forum, 389-3, 123, 2002
13 The effect of epitaxial growth on warp of SiC wafers
Nakayama K, Miyanagi Y, Maruyama K, Okamoto Y, Shiomi H, Nishino S
Materials Science Forum, 389-3, 235, 2002
14 Stress distribution in 2in SiC wafer measured by photoelastic method
Sasaki M, Miyanagi Y, Nakayama K, Shiomi H, Nishino S
Materials Science Forum, 389-3, 403, 2002
15 Characterization of 2in SiC as-grown bulk by SWBXT at SPring-8
Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
Materials Science Forum, 389-3, 407, 2002
16 Observation of 2in SiC wafer by SWBXT at SPring-8
Sasaki M, Hirai A, Miyanagi T, Furusho T, Nishiguchi T, Shiomi H, Nishino S
Materials Science Forum, 389-3, 411, 2002
17 4H-SiC MOSFETs on (03(3)over-bar8) face
Hirao T, Yano H, Kimoto T, Matsunami H, Shiomi H
Materials Science Forum, 389-3, 1065, 2002
18 Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes
Kimoto T, Danno K, Fujihira K, Shiomi H, Matsunami H
Materials Science Forum, 433-4, 197, 2002
19 Characterization of 2 inch SiC wafers made by the sublimation method
Sasaki M, Shiomi H, Nishino S
Materials Science Forum, 353-356, 267, 2001
20 Polytype and defect control of two inch diameter bulk SiC
Sasaki M, Shiomi H, Harima H, Nishino S
Materials Science Forum, 338-3, 485, 2000