화학공학소재연구정보센터
검색결과 : 21건
No. Article
11 Simple self-aligned fabrication process for silicon carbide static induction transistors
Dynefors K, Desmaris V, Eriksson J, Nilsson PA, Rorsman N, Zirath H
Materials Science Forum, 457-460, 1125, 2004
12 High frequency measurements and simulations of SiC MESFETs up to 250 degrees C
Liu W, Zetterling CM, Ostling M, Eriksson J, Rorsman N, Zirath H
Materials Science Forum, 457-460, 1209, 2004
13 Investigation of the scalability of 4H-SiC MESFETs for high frequency applications
Rorsman N, Nilsson PA, Eriksson J, Andersson K, Zirath H
Materials Science Forum, 457-460, 1229, 2004
14 High CW power 0.3 mu m gate AlGaN/GaN HEMTs grown by MBE on sapphire
Desmaris V, Eriksson J, Rorsman N, Zirath H
Materials Science Forum, 457-460, 1629, 2004
15 Evaluation of SiC MESFET structures using large-signal time-domain simulations
Jonsson R, Eriksson J, Wahab Q, Rudner S, Rorsman N, Zirath H, Svensson C
Materials Science Forum, 389-3, 1395, 2002
16 A comparison of MESFETs on different 4H-Silicon carbide semi-insulating substrates
Eriksson J, Rorsman N, Zirath H, Henry A, Magnusson B, Ellison A, Janzen E
Materials Science Forum, 433-4, 737, 2002
17 Performance of silicon carbide microwave MESFETs using a thin p-doped buffer layer
Eriksson J, Rorsman N, Zirath H
Materials Science Forum, 433-4, 741, 2002
18 A comparison between physical simulations and experiment results in 4H-SiC MESFETs with non-constant doping in the channel and buffer layers
Eriksson J, Rorsman N, Zirath H, Jonsson R, Wahab Q, Rudner S
Materials Science Forum, 353-356, 699, 2001
19 Design and characterization of a SiC Schottky diode mixer
Eriksson J, Ferdos F, Zirath H, Rorsman N
Materials Science Forum, 338-3, 1207, 2000
20 Characterization of SiC MESFETs on conducting substrates
Nilsson PA, Saroukhan AM, Svedberg JO, Konstantinov A, Karlsson S, Adas C, Gustafsson U, Harris C, Rorsman N, Eriksson J, Zirath H
Materials Science Forum, 338-3, 1255, 2000