화학공학소재연구정보센터
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No. Article
11 Achieving very high drain current of 1.23 mA/mu m in a 1-mu m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
Lin TD, Chang P, Wu YD, Chiu HC, Kwo J, Hong M
Journal of Crystal Growth, 323(1), 518, 2011
12 Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
Lin TD, Chiu HC, Chang P, Chang YH, Wu YD, Hong M, Kwo J
Solid-State Electronics, 54(9), 919, 2010
13 Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-kappa dielectrics on Ge without interfacial layers
Chu LK, Chu RL, Lin TD, Lee WC, Lin CA, Huang ML, Lee YJ, Kwo J, Hong M
Solid-State Electronics, 54(9), 965, 2010
14 Research advances on III-V MOSFET electronics beyond Si CMOS
Kwo J, Hong M
Journal of Crystal Growth, 311(7), 1944, 2009
15 Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics
Lin CA, Lin TD, Chiang TH, Chiu HC, Chang P, Hong M, Kwo J
Journal of Crystal Growth, 311(7), 1954, 2009
16 Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts
Liao CC, Cheng D, Cheng CC, Cheng KY, Feng M, Chiang TH, Kwo J, Hong M
Journal of Crystal Growth, 311(7), 1958, 2009
17 GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy
Lee WC, Lee YJ, Kwo J, Hsu CH, Lee CH, Wu SY, Ng HM, Hong M
Journal of Crystal Growth, 311(7), 2006, 2009
18 GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth
Chang YH, Chiu HC, Chang WH, Kwo J, Tsai CC, Hong JM, Hong M
Journal of Crystal Growth, 311(7), 2084, 2009
19 High kappa dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties
Chang WH, Lee CH, Chang P, Chang YC, Lee YJ, Kwo J, Tsai CC, Hong JM, Hsu CH, Hong M
Journal of Crystal Growth, 311(7), 2183, 2009
20 Molecular beam epitaxy-grown Al2O3/HfO2 high-kappa dielectrics for germanium
Lee WC, Chin BH, Chu LK, Lin TD, Lee YJ, Tung LT, Lee CH, Hong M, Kwo J
Journal of Crystal Growth, 311(7), 2187, 2009