11 |
Achieving very high drain current of 1.23 mA/mu m in a 1-mu m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET Lin TD, Chang P, Wu YD, Chiu HC, Kwo J, Hong M Journal of Crystal Growth, 323(1), 518, 2011 |
12 |
Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics Lin TD, Chiu HC, Chang P, Chang YH, Wu YD, Hong M, Kwo J Solid-State Electronics, 54(9), 919, 2010 |
13 |
Effective passivation and high-performance metal-oxide-semiconductor devices using ultra-high-vacuum deposited high-kappa dielectrics on Ge without interfacial layers Chu LK, Chu RL, Lin TD, Lee WC, Lin CA, Huang ML, Lee YJ, Kwo J, Hong M Solid-State Electronics, 54(9), 965, 2010 |
14 |
Research advances on III-V MOSFET electronics beyond Si CMOS Kwo J, Hong M Journal of Crystal Growth, 311(7), 1944, 2009 |
15 |
Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics Lin CA, Lin TD, Chiang TH, Chiu HC, Chang P, Hong M, Kwo J Journal of Crystal Growth, 311(7), 1954, 2009 |
16 |
Inversion-channel enhancement-mode GaAs MOSFETs with regrown source and drain contacts Liao CC, Cheng D, Cheng CC, Cheng KY, Feng M, Chiang TH, Kwo J, Hong M Journal of Crystal Growth, 311(7), 1958, 2009 |
17 |
GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy Lee WC, Lee YJ, Kwo J, Hsu CH, Lee CH, Wu SY, Ng HM, Hong M Journal of Crystal Growth, 311(7), 2006, 2009 |
18 |
GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth Chang YH, Chiu HC, Chang WH, Kwo J, Tsai CC, Hong JM, Hong M Journal of Crystal Growth, 311(7), 2084, 2009 |
19 |
High kappa dielectric single-crystal monoclinic Gd2O3 on GaN with excellent thermal, structural, and electrical properties Chang WH, Lee CH, Chang P, Chang YC, Lee YJ, Kwo J, Tsai CC, Hong JM, Hsu CH, Hong M Journal of Crystal Growth, 311(7), 2183, 2009 |
20 |
Molecular beam epitaxy-grown Al2O3/HfO2 high-kappa dielectrics for germanium Lee WC, Chin BH, Chu LK, Lin TD, Lee YJ, Tung LT, Lee CH, Hong M, Kwo J Journal of Crystal Growth, 311(7), 2187, 2009 |